High-mobility oxide TFT for circuit integration of AMOLEDs

High-mobility oxide TFT for circuit integration of AMOLEDs

— A high‐mobility and high‐reliability oxide thin‐film transistor (TFT) that uses In‐Sn‐Zn‐O (ITZO) as a channel material has been developed. The mobility was 30.9 cm2/V‐sec and the threshold voltage shift after 20,000 sec of a bias‐temperature‐stress (BTS) test (with a stress condition of Vg = 15 V...

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Veröffentlicht in:Journal of the Society for Information Display 2011-12, Vol.19 (12), p.867-872
Hauptverfasser: Fukumoto, Eri, Arai, Toshiaki, Morosawa, Narihiro, Tokunaga, Kazuhiko, Terai, Yasuhiro, Fujimori, Takashige, Sasaoka, Tatsuya
Format: Artikel
Sprache:eng
Schlagworte:
circuit integration
ITZO
OLED
Oxide TFT
threshold voltage
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Beschreibung
Zusammenfassung:— A high‐mobility and high‐reliability oxide thin‐film transistor (TFT) that uses In‐Sn‐Zn‐O (ITZO) as a channel material has been developed. The mobility was 30.9 cm2/V‐sec and the threshold voltage shift after 20,000 sec of a bias‐temperature‐stress (BTS) test (with a stress condition of Vg = 15 V, Vd = 15 V, and T = 50°C) was smaller than 0.1 V. In addition, a method of obtaining a stable enhancement‐type TFT, which realizes circuit integration for active‐matrix organic light‐emitting diode (AMOLED) displays has been developed.
ISSN:1071-0922
1938-3657
DOI:10.1889/JSID19.12.867