P‐105: Advanced Furnace‐Growing Technology to Fabricate Nanowire Type In 2 O 3 Film on Gallium Nitride LEDs

P‐105: Advanced Furnace‐Growing Technology to Fabricate Nanowire Type In 2 O 3 Film on Gallium Nitride LEDs

We have developed the method on the enhanced light emission of semiconductors with nanowire type In 2 O 3 films. The nanowire type In 2 O 3 films is deposited by the furnace at low temperature and the radius is about 50 nm. Increasable intensity of GaN LEDs with nanowire type In 2 O 3 film is more t...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2011-06, Vol.42 (1), p.1498-1500
Hauptverfasser: Lian, Jan‐Tian, Tsao, Kai‐Chieh, Chang, Yu‐Ming, Su, Chun‐Wei, Zeng, Jhao‐Ming, Lai, Yi‐Chun, Lin, Tai‐Yuan
Format: Artikel
Sprache:eng
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Zusammenfassung:We have developed the method on the enhanced light emission of semiconductors with nanowire type In 2 O 3 films. The nanowire type In 2 O 3 films is deposited by the furnace at low temperature and the radius is about 50 nm. Increasable intensity of GaN LEDs with nanowire type In 2 O 3 film is more than several fold.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.3621140