P-29: A Novel Six-Mask Process for High Performance μc-Si TFT Using Indirect Thermal Crystallization

In this work, we have fabricated high performance μ c‐Si TFT using bottom gate 6‐mask process. IR laser diode was used for crystallization of a‐Si films. The gate pad (Mo) for TFT and gate bus line (Cu) were formed simultaneously by half tone mask technique. To solve the problem that the gate metal...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	SID International Symposium Digest of technical papers 2011-06, Vol.42 (1), p.1198-1200
Hauptverfasser:	Bae, Jun Hyeon, Lee, Hong Koo, Choi, Byung Kook, Lee, Sul, Kim, Ki Tae, Kim, Sung Ki, Park, Kwon-Shik, Bae, Jong Uk, Kim, Chang-Dong, Jun, Myung Chul
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!