18.1: Invited Paper: Oxide TFT Driving Transparent AMOLED

18.1: Invited Paper: Oxide TFT Driving Transparent AMOLED

We have fabricated 3.2″ QVGA transparent AMOLED by integrating photostable top gate IGZO TFT array and highly transparent OLED. The photostability of oxide TFT was investigated under constant gate bias and constant current CC stress to explore the possibility of OLED application. After 40 hours CC s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:SID International Symposium Digest of technical papers 2010-05, Vol.41 (1), p.245-248
Hauptverfasser: Park, SangHee Ko, Ryu, Minki, Yang, Shinhyuk, Byun, Chunwon, Hwang, ChiSun, Cho, Kyoung Ik, Im, Woo-Bin, Kim, Young-Eun, Kim, Tae-Su, Ha, Young-Bo, Kim, Kyoung-Bea
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 248
container_issue 1
container_start_page 245
container_title SID International Symposium Digest of technical papers
container_volume 41
creator Park, SangHee Ko
Ryu, Minki
Yang, Shinhyuk
Byun, Chunwon
Hwang, ChiSun
Cho, Kyoung Ik
Im, Woo-Bin
Kim, Young-Eun
Kim, Tae-Su
Ha, Young-Bo
Kim, Kyoung-Bea
description We have fabricated 3.2″ QVGA transparent AMOLED by integrating photostable top gate IGZO TFT array and highly transparent OLED. The photostability of oxide TFT was investigated under constant gate bias and constant current CC stress to explore the possibility of OLED application. After 40 hours CC stress of 10 μA with halogen lamp illumination, the ΔVth was just − 0.22 V while that obtained under dark was + 0.1 V. with newly designed OLED cathode and transparent getter we increase OLED transmittance up to 80% with keeping resistance of cathode at 6 Ω;/□. Outdoor stability of OLED and oxide TFT make transparent AMOLED viable in the real market.
doi_str_mv 10.1889/1.3500418
format Article
fullrecord <record><control><sourceid>istex_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1889_1_3500418</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>ark_67375_WNG_1WBSXXKS_L</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2186-dee27923d9529a9253a55f7527f72457bdf8003c10542a9e2ec55f71283046ab3</originalsourceid><addsrcrecordid>eNp1j0tPAjEUhRujiYgu_AfduhjobacvdshL4igkjIFdU2Y6poojaQnCvxcCcefqLO733ZyD0D2QFiil29BinJAU1AVqUBAqIcD1JWoQomWihVhco5sYPwhhLE11A2lQLejgcb31G1fiqV270MGTnS8dzoc57ge_9fU7zoOt49oGV29w92WSDfq36Kqyq-juztlEb8NB3ntKsslo3OtmSUFBiaR0jkpNWak51VZTziznleRUVpKmXC7LSh3aFEB4Sq121BXHO1DFSCrskjXRw-lvEb5jDK4y6-C_bNgbIOa42YA5bz6w7RP741du_z9oZv18SrkWByM5GT5u3O7PsOHTCMkkN_PXkYH542yxeJ6ZjP0ClB1igg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>18.1: Invited Paper: Oxide TFT Driving Transparent AMOLED</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Park, SangHee Ko ; Ryu, Minki ; Yang, Shinhyuk ; Byun, Chunwon ; Hwang, ChiSun ; Cho, Kyoung Ik ; Im, Woo-Bin ; Kim, Young-Eun ; Kim, Tae-Su ; Ha, Young-Bo ; Kim, Kyoung-Bea</creator><creatorcontrib>Park, SangHee Ko ; Ryu, Minki ; Yang, Shinhyuk ; Byun, Chunwon ; Hwang, ChiSun ; Cho, Kyoung Ik ; Im, Woo-Bin ; Kim, Young-Eun ; Kim, Tae-Su ; Ha, Young-Bo ; Kim, Kyoung-Bea</creatorcontrib><description>We have fabricated 3.2″ QVGA transparent AMOLED by integrating photostable top gate IGZO TFT array and highly transparent OLED. The photostability of oxide TFT was investigated under constant gate bias and constant current CC stress to explore the possibility of OLED application. After 40 hours CC stress of 10 μA with halogen lamp illumination, the ΔVth was just − 0.22 V while that obtained under dark was + 0.1 V. with newly designed OLED cathode and transparent getter we increase OLED transmittance up to 80% with keeping resistance of cathode at 6 Ω;/□. Outdoor stability of OLED and oxide TFT make transparent AMOLED viable in the real market.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1889/1.3500418</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><ispartof>SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.245-248</ispartof><rights>2010 Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2186-dee27923d9529a9253a55f7527f72457bdf8003c10542a9e2ec55f71283046ab3</citedby><cites>FETCH-LOGICAL-c2186-dee27923d9529a9253a55f7527f72457bdf8003c10542a9e2ec55f71283046ab3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1889%2F1.3500418$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1889%2F1.3500418$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Park, SangHee Ko</creatorcontrib><creatorcontrib>Ryu, Minki</creatorcontrib><creatorcontrib>Yang, Shinhyuk</creatorcontrib><creatorcontrib>Byun, Chunwon</creatorcontrib><creatorcontrib>Hwang, ChiSun</creatorcontrib><creatorcontrib>Cho, Kyoung Ik</creatorcontrib><creatorcontrib>Im, Woo-Bin</creatorcontrib><creatorcontrib>Kim, Young-Eun</creatorcontrib><creatorcontrib>Kim, Tae-Su</creatorcontrib><creatorcontrib>Ha, Young-Bo</creatorcontrib><creatorcontrib>Kim, Kyoung-Bea</creatorcontrib><title>18.1: Invited Paper: Oxide TFT Driving Transparent AMOLED</title><title>SID International Symposium Digest of technical papers</title><description>We have fabricated 3.2″ QVGA transparent AMOLED by integrating photostable top gate IGZO TFT array and highly transparent OLED. The photostability of oxide TFT was investigated under constant gate bias and constant current CC stress to explore the possibility of OLED application. After 40 hours CC stress of 10 μA with halogen lamp illumination, the ΔVth was just − 0.22 V while that obtained under dark was + 0.1 V. with newly designed OLED cathode and transparent getter we increase OLED transmittance up to 80% with keeping resistance of cathode at 6 Ω;/□. Outdoor stability of OLED and oxide TFT make transparent AMOLED viable in the real market.</description><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1j0tPAjEUhRujiYgu_AfduhjobacvdshL4igkjIFdU2Y6poojaQnCvxcCcefqLO733ZyD0D2QFiil29BinJAU1AVqUBAqIcD1JWoQomWihVhco5sYPwhhLE11A2lQLejgcb31G1fiqV270MGTnS8dzoc57ge_9fU7zoOt49oGV29w92WSDfq36Kqyq-juztlEb8NB3ntKsslo3OtmSUFBiaR0jkpNWak51VZTziznleRUVpKmXC7LSh3aFEB4Sq121BXHO1DFSCrskjXRw-lvEb5jDK4y6-C_bNgbIOa42YA5bz6w7RP741du_z9oZv18SrkWByM5GT5u3O7PsOHTCMkkN_PXkYH542yxeJ6ZjP0ClB1igg</recordid><startdate>201005</startdate><enddate>201005</enddate><creator>Park, SangHee Ko</creator><creator>Ryu, Minki</creator><creator>Yang, Shinhyuk</creator><creator>Byun, Chunwon</creator><creator>Hwang, ChiSun</creator><creator>Cho, Kyoung Ik</creator><creator>Im, Woo-Bin</creator><creator>Kim, Young-Eun</creator><creator>Kim, Tae-Su</creator><creator>Ha, Young-Bo</creator><creator>Kim, Kyoung-Bea</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201005</creationdate><title>18.1: Invited Paper: Oxide TFT Driving Transparent AMOLED</title><author>Park, SangHee Ko ; Ryu, Minki ; Yang, Shinhyuk ; Byun, Chunwon ; Hwang, ChiSun ; Cho, Kyoung Ik ; Im, Woo-Bin ; Kim, Young-Eun ; Kim, Tae-Su ; Ha, Young-Bo ; Kim, Kyoung-Bea</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2186-dee27923d9529a9253a55f7527f72457bdf8003c10542a9e2ec55f71283046ab3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Park, SangHee Ko</creatorcontrib><creatorcontrib>Ryu, Minki</creatorcontrib><creatorcontrib>Yang, Shinhyuk</creatorcontrib><creatorcontrib>Byun, Chunwon</creatorcontrib><creatorcontrib>Hwang, ChiSun</creatorcontrib><creatorcontrib>Cho, Kyoung Ik</creatorcontrib><creatorcontrib>Im, Woo-Bin</creatorcontrib><creatorcontrib>Kim, Young-Eun</creatorcontrib><creatorcontrib>Kim, Tae-Su</creatorcontrib><creatorcontrib>Ha, Young-Bo</creatorcontrib><creatorcontrib>Kim, Kyoung-Bea</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Park, SangHee Ko</au><au>Ryu, Minki</au><au>Yang, Shinhyuk</au><au>Byun, Chunwon</au><au>Hwang, ChiSun</au><au>Cho, Kyoung Ik</au><au>Im, Woo-Bin</au><au>Kim, Young-Eun</au><au>Kim, Tae-Su</au><au>Ha, Young-Bo</au><au>Kim, Kyoung-Bea</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>18.1: Invited Paper: Oxide TFT Driving Transparent AMOLED</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2010-05</date><risdate>2010</risdate><volume>41</volume><issue>1</issue><spage>245</spage><epage>248</epage><pages>245-248</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>We have fabricated 3.2″ QVGA transparent AMOLED by integrating photostable top gate IGZO TFT array and highly transparent OLED. The photostability of oxide TFT was investigated under constant gate bias and constant current CC stress to explore the possibility of OLED application. After 40 hours CC stress of 10 μA with halogen lamp illumination, the ΔVth was just − 0.22 V while that obtained under dark was + 0.1 V. with newly designed OLED cathode and transparent getter we increase OLED transmittance up to 80% with keeping resistance of cathode at 6 Ω;/□. Outdoor stability of OLED and oxide TFT make transparent AMOLED viable in the real market.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1889/1.3500418</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0097-966X
ispartof SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.245-248
issn 0097-966X
2168-0159
language eng
recordid cdi_crossref_primary_10_1889_1_3500418
source Wiley Online Library Journals Frontfile Complete
title 18.1: Invited Paper: Oxide TFT Driving Transparent AMOLED
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-10T06%3A14%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-istex_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=18.1:%20Invited%20Paper:%20Oxide%20TFT%20Driving%20Transparent%20AMOLED&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Park,%20SangHee%20Ko&rft.date=2010-05&rft.volume=41&rft.issue=1&rft.spage=245&rft.epage=248&rft.pages=245-248&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1889/1.3500418&rft_dat=%3Cistex_cross%3Eark_67375_WNG_1WBSXXKS_L%3C/istex_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true