76.2: Development of Highly Stable a‐IGZO TFT with TiO x as a Passivation Layer for Active‐Matrix Display
Titanium oxide (TiO x ) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etch...
Gespeichert in:
| Veröffentlicht in: | SID International Symposium Digest of technical papers 2010-05, Vol.41 (1), p.1132-1135 |
|---|---|
| Hauptverfasser: | , , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1135 |
|---|---|
| container_issue | 1 |
| container_start_page | 1132 |
| container_title | SID International Symposium Digest of technical papers |
| container_volume | 41 |
| creator | Seo, Hyun‐Sik Bae, Jong‐Uk Kim, Dae‐Won Ryoo, Chang II Kang, Im‐Kuk Min, Soon‐Young Kim, Yong‐Yub Han, Joon‐Soo Kim, Chang‐Dong Hwang, Yong‐Kee Chung, In‐Jae |
| description | Titanium oxide (TiO
x
) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etching process and transformed into TiO
x
by the surface treatment using oxygen plasma. From device measurement, we have observed that I
on
/I
off
ratio and mobility are ∼10
8
and 9 cm
2
V
−1
sec
−1
, respectively. AMLCD panel has been demonstrated to verify the device uniformity and performance. |
| doi_str_mv | 10.1889/1.3499856 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1889_1_3499856</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1889_1_3499856</sourcerecordid><originalsourceid>FETCH-LOGICAL-c746-58f6b11af91c21c78d2276c282173692df9aa2b5a0eb59145793c9af9155e783</originalsourceid><addsrcrecordid>eNotkDtOw0AURUcIJEKgYAevpXCYj-dHFwXykYKCFBeIxnp2ZsggJ448Vog7lsAaWQlEpDrNPbc4hNwyOmDG2Hs2EKm1Rqoz0uNMmYQyac9Jj1KrE6vU6yW5ivGDUiHS1PbIRqsBf4BHt3dVvdu4bQu1h2l4X1cdLFssKgf48_U9m7wtIBtn8BnaNWRhAQfACAgvGGPYYxvqLcyxcw34uoFh2Ya9-_OesW3CAR5D3FXYXZMLj1V0Nyf2yXL8lI2myXwxmY2G86TUqUqk8apgDL1lJWelNivOtSq54UwLZfnKW0ReSKSukJalUltR2uNcSqeN6JO7_9eyqWNsnM93Tdhg0-WM5sdKOctPlcQvZXZZpw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>76.2: Development of Highly Stable a‐IGZO TFT with TiO x as a Passivation Layer for Active‐Matrix Display</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Seo, Hyun‐Sik ; Bae, Jong‐Uk ; Kim, Dae‐Won ; Ryoo, Chang II ; Kang, Im‐Kuk ; Min, Soon‐Young ; Kim, Yong‐Yub ; Han, Joon‐Soo ; Kim, Chang‐Dong ; Hwang, Yong‐Kee ; Chung, In‐Jae</creator><creatorcontrib>Seo, Hyun‐Sik ; Bae, Jong‐Uk ; Kim, Dae‐Won ; Ryoo, Chang II ; Kang, Im‐Kuk ; Min, Soon‐Young ; Kim, Yong‐Yub ; Han, Joon‐Soo ; Kim, Chang‐Dong ; Hwang, Yong‐Kee ; Chung, In‐Jae</creatorcontrib><description>Titanium oxide (TiO
x
) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etching process and transformed into TiO
x
by the surface treatment using oxygen plasma. From device measurement, we have observed that I
on
/I
off
ratio and mobility are ∼10
8
and 9 cm
2
V
−1
sec
−1
, respectively. AMLCD panel has been demonstrated to verify the device uniformity and performance.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1889/1.3499856</identifier><language>eng</language><ispartof>SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.1132-1135</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c746-58f6b11af91c21c78d2276c282173692df9aa2b5a0eb59145793c9af9155e783</citedby><cites>FETCH-LOGICAL-c746-58f6b11af91c21c78d2276c282173692df9aa2b5a0eb59145793c9af9155e783</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Seo, Hyun‐Sik</creatorcontrib><creatorcontrib>Bae, Jong‐Uk</creatorcontrib><creatorcontrib>Kim, Dae‐Won</creatorcontrib><creatorcontrib>Ryoo, Chang II</creatorcontrib><creatorcontrib>Kang, Im‐Kuk</creatorcontrib><creatorcontrib>Min, Soon‐Young</creatorcontrib><creatorcontrib>Kim, Yong‐Yub</creatorcontrib><creatorcontrib>Han, Joon‐Soo</creatorcontrib><creatorcontrib>Kim, Chang‐Dong</creatorcontrib><creatorcontrib>Hwang, Yong‐Kee</creatorcontrib><creatorcontrib>Chung, In‐Jae</creatorcontrib><title>76.2: Development of Highly Stable a‐IGZO TFT with TiO x as a Passivation Layer for Active‐Matrix Display</title><title>SID International Symposium Digest of technical papers</title><description>Titanium oxide (TiO
x
) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etching process and transformed into TiO
x
by the surface treatment using oxygen plasma. From device measurement, we have observed that I
on
/I
off
ratio and mobility are ∼10
8
and 9 cm
2
V
−1
sec
−1
, respectively. AMLCD panel has been demonstrated to verify the device uniformity and performance.</description><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNotkDtOw0AURUcIJEKgYAevpXCYj-dHFwXykYKCFBeIxnp2ZsggJ448Vog7lsAaWQlEpDrNPbc4hNwyOmDG2Hs2EKm1Rqoz0uNMmYQyac9Jj1KrE6vU6yW5ivGDUiHS1PbIRqsBf4BHt3dVvdu4bQu1h2l4X1cdLFssKgf48_U9m7wtIBtn8BnaNWRhAQfACAgvGGPYYxvqLcyxcw34uoFh2Ya9-_OesW3CAR5D3FXYXZMLj1V0Nyf2yXL8lI2myXwxmY2G86TUqUqk8apgDL1lJWelNivOtSq54UwLZfnKW0ReSKSukJalUltR2uNcSqeN6JO7_9eyqWNsnM93Tdhg0-WM5sdKOctPlcQvZXZZpw</recordid><startdate>201005</startdate><enddate>201005</enddate><creator>Seo, Hyun‐Sik</creator><creator>Bae, Jong‐Uk</creator><creator>Kim, Dae‐Won</creator><creator>Ryoo, Chang II</creator><creator>Kang, Im‐Kuk</creator><creator>Min, Soon‐Young</creator><creator>Kim, Yong‐Yub</creator><creator>Han, Joon‐Soo</creator><creator>Kim, Chang‐Dong</creator><creator>Hwang, Yong‐Kee</creator><creator>Chung, In‐Jae</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201005</creationdate><title>76.2: Development of Highly Stable a‐IGZO TFT with TiO x as a Passivation Layer for Active‐Matrix Display</title><author>Seo, Hyun‐Sik ; Bae, Jong‐Uk ; Kim, Dae‐Won ; Ryoo, Chang II ; Kang, Im‐Kuk ; Min, Soon‐Young ; Kim, Yong‐Yub ; Han, Joon‐Soo ; Kim, Chang‐Dong ; Hwang, Yong‐Kee ; Chung, In‐Jae</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c746-58f6b11af91c21c78d2276c282173692df9aa2b5a0eb59145793c9af9155e783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seo, Hyun‐Sik</creatorcontrib><creatorcontrib>Bae, Jong‐Uk</creatorcontrib><creatorcontrib>Kim, Dae‐Won</creatorcontrib><creatorcontrib>Ryoo, Chang II</creatorcontrib><creatorcontrib>Kang, Im‐Kuk</creatorcontrib><creatorcontrib>Min, Soon‐Young</creatorcontrib><creatorcontrib>Kim, Yong‐Yub</creatorcontrib><creatorcontrib>Han, Joon‐Soo</creatorcontrib><creatorcontrib>Kim, Chang‐Dong</creatorcontrib><creatorcontrib>Hwang, Yong‐Kee</creatorcontrib><creatorcontrib>Chung, In‐Jae</creatorcontrib><collection>CrossRef</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seo, Hyun‐Sik</au><au>Bae, Jong‐Uk</au><au>Kim, Dae‐Won</au><au>Ryoo, Chang II</au><au>Kang, Im‐Kuk</au><au>Min, Soon‐Young</au><au>Kim, Yong‐Yub</au><au>Han, Joon‐Soo</au><au>Kim, Chang‐Dong</au><au>Hwang, Yong‐Kee</au><au>Chung, In‐Jae</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>76.2: Development of Highly Stable a‐IGZO TFT with TiO x as a Passivation Layer for Active‐Matrix Display</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2010-05</date><risdate>2010</risdate><volume>41</volume><issue>1</issue><spage>1132</spage><epage>1135</epage><pages>1132-1135</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>Titanium oxide (TiO
x
) was employed for passivation layer of indium‐gallium‐zinc oxide (a‐IGZO) TFTs. Molybdenum (Mo) and titanium (Ti) was used as a source‐drain metal. It is demonstrated the titanium layer could be used as an etch stopper layer to protect the back channel of a‐IGZO during Mo etching process and transformed into TiO
x
by the surface treatment using oxygen plasma. From device measurement, we have observed that I
on
/I
off
ratio and mobility are ∼10
8
and 9 cm
2
V
−1
sec
−1
, respectively. AMLCD panel has been demonstrated to verify the device uniformity and performance.</abstract><doi>10.1889/1.3499856</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0097-966X |
| ispartof | SID International Symposium Digest of technical papers, 2010-05, Vol.41 (1), p.1132-1135 |
| issn | 0097-966X 2168-0159 |
| language | eng |
| recordid | cdi_crossref_primary_10_1889_1_3499856 |
| source | Wiley Online Library Journals Frontfile Complete |
| title | 76.2: Development of Highly Stable a‐IGZO TFT with TiO x as a Passivation Layer for Active‐Matrix Display |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T01%3A47%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=76.2:%20Development%20of%20Highly%20Stable%20a%E2%80%90IGZO%20TFT%20with%20TiO%20x%20as%20a%20Passivation%20Layer%20for%20Active%E2%80%90Matrix%20Display&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Seo,%20Hyun%E2%80%90Sik&rft.date=2010-05&rft.volume=41&rft.issue=1&rft.spage=1132&rft.epage=1135&rft.pages=1132-1135&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1889/1.3499856&rft_dat=%3Ccrossref%3E10_1889_1_3499856%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |