P-13: Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays

We studied the optical and electrical properties of the amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs). To develop a‐IGZO density‐of‐states model, intrinsic a‐IGZO optical properties such as optical band gap and Urbach energy, and TFT characteristics under illumination are i...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2008-05, Vol.39 (1), p.1215-1218
Hauptverfasser: Chuang, Chiao-Shun, Fung, Tze-Ching, Mullins, Barry G., Nomura, Kenji, Kamiya, Toshio, Shieh, Han-Ping David, Hosono, Hideo, Kanicki, Jerzy
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container_issue 1
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container_title SID International Symposium Digest of technical papers
container_volume 39
creator Chuang, Chiao-Shun
Fung, Tze-Ching
Mullins, Barry G.
Nomura, Kenji
Kamiya, Toshio
Shieh, Han-Ping David
Hosono, Hideo
Kanicki, Jerzy
description We studied the optical and electrical properties of the amorphous indium gallium zinc oxide thin‐film transistors (a‐IGZO TFTs). To develop a‐IGZO density‐of‐states model, intrinsic a‐IGZO optical properties such as optical band gap and Urbach energy, and TFT characteristics under illumination are investigated. During the a‐IGZO TFTs illumination with the wavelengths ranging from 460 to 660 nm, the off‐state drain current only slightly increases while a large increase was observed for the wavelength below 400 nm. Threshold voltage and subthreshold swing are also only slightly modified between 460 to 660 nm, while field‐effect mobility is almost unchanged in the investigated photon energy range. The observed results are consistent with the a‐IGZO optical energy band gap of about 3.05 eV. This study suggest that the a‐IGZO TFTs are light sensitive above 3.0 eV and photogenerated electrons are more mobile than holes within device channel region.
doi_str_mv 10.1889/1.3069354
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title P-13: Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays
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