P-22: Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs

P-22: Single-Grain Si TFTs and Circuits for Flexible Electronics and 3D-ICs

TFTs were fabricated inside a location‐controlled Si grains through the μ‐Czochralski process with excimer‐laser. Single‐grain TFTs and inverters fabricated at 350°C showed a mobility of 597 cm2/Vs and a propagation delay of 3.1 ns. Combining a‐Si by sputtering and SiO2 by ICPECVD, SG‐TFTs were fabr...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2007-05, Vol.38 (1), p.252-255
Hauptverfasser: Ishihara, Ryoichi, Rana, Vikas, He, Ming, Metselaar, Wim, Beenakker, Kees, Hiroshima, Yasushi, Abe, Daisuke, Inoue, Satoshi
Format: Artikel
Sprache:eng
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Zusammenfassung:TFTs were fabricated inside a location‐controlled Si grains through the μ‐Czochralski process with excimer‐laser. Single‐grain TFTs and inverters fabricated at 350°C showed a mobility of 597 cm2/Vs and a propagation delay of 3.1 ns. Combining a‐Si by sputtering and SiO2 by ICPECVD, SG‐TFTs were fabricated with a maximum temperature of 100°C. A mobility of 289 cm2/Vs was obtained successfully.
ISSN:0097-966X
2168-0159
DOI:10.1889/1.2785277