Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs
— High‐performance top‐gate thin‐film transistors (TFTs) with a transparent zinc oxide (ZnO) channel have been developed. ZnO thin films used as active channels were deposited by rf magnetron sputtering. The electrical properties and thermal stability of the ZnO films are controlled by the depositio...
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| Veröffentlicht in: | Journal of the Society for Information Display 2007-01, Vol.15 (1), p.17-22 |
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| container_title | Journal of the Society for Information Display |
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| creator | Hirao, Takashi Furuta, Mamoru Furuta, Hiroshi Matsuda, Tokiyoshi Hiramatsu, Takahiro Hokari, Hitoshi Yoshida, Motohiko Ishii, Hiromitsu Kakegawa, Masayuki |
| description | — High‐performance top‐gate thin‐film transistors (TFTs) with a transparent zinc oxide (ZnO) channel have been developed. ZnO thin films used as active channels were deposited by rf magnetron sputtering. The electrical properties and thermal stability of the ZnO films are controlled by the deposition conditions. A gate insulator made of silicon nitride (SiNx) was deposited on the ZnO films by conventional P‐CVD. A novel ZnO‐TFT process based on photolithography is proposed for AMLCDs. AMLCDs having an aperture ratio and pixel density comparable to those of a‐Si:H TFT‐LCDs are driven by ZnO TFTs using the same driving scheme of conventional AMLCDs. |
| doi_str_mv | 10.1889/1.2451545 |
| format | Article |
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ZnO thin films used as active channels were deposited by rf magnetron sputtering. The electrical properties and thermal stability of the ZnO films are controlled by the deposition conditions. A gate insulator made of silicon nitride (SiNx) was deposited on the ZnO films by conventional P‐CVD. A novel ZnO‐TFT process based on photolithography is proposed for AMLCDs. AMLCDs having an aperture ratio and pixel density comparable to those of a‐Si:H TFT‐LCDs are driven by ZnO TFTs using the same driving scheme of conventional AMLCDs.</description><identifier>ISSN: 1071-0922</identifier><identifier>EISSN: 1938-3657</identifier><identifier>DOI: 10.1889/1.2451545</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><subject>AMLCDs ; thin-film transistor (TFT) ; top gate ; Transparent oxide semiconductor ; zinc oxide (ZnO) ; ZnO TFT</subject><ispartof>Journal of the Society for Information Display, 2007-01, Vol.15 (1), p.17-22</ispartof><rights>2007 Society for Information Display</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3731-33ad75a279acd4d50042534553929a942c551d6cc53dbf6a1f63d0df49cb0a4d3</citedby><cites>FETCH-LOGICAL-c3731-33ad75a279acd4d50042534553929a942c551d6cc53dbf6a1f63d0df49cb0a4d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1889%2F1.2451545$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1889%2F1.2451545$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Hirao, Takashi</creatorcontrib><creatorcontrib>Furuta, Mamoru</creatorcontrib><creatorcontrib>Furuta, Hiroshi</creatorcontrib><creatorcontrib>Matsuda, Tokiyoshi</creatorcontrib><creatorcontrib>Hiramatsu, Takahiro</creatorcontrib><creatorcontrib>Hokari, Hitoshi</creatorcontrib><creatorcontrib>Yoshida, Motohiko</creatorcontrib><creatorcontrib>Ishii, Hiromitsu</creatorcontrib><creatorcontrib>Kakegawa, Masayuki</creatorcontrib><title>Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs</title><title>Journal of the Society for Information Display</title><description>— High‐performance top‐gate thin‐film transistors (TFTs) with a transparent zinc oxide (ZnO) channel have been developed. ZnO thin films used as active channels were deposited by rf magnetron sputtering. The electrical properties and thermal stability of the ZnO films are controlled by the deposition conditions. A gate insulator made of silicon nitride (SiNx) was deposited on the ZnO films by conventional P‐CVD. A novel ZnO‐TFT process based on photolithography is proposed for AMLCDs. AMLCDs having an aperture ratio and pixel density comparable to those of a‐Si:H TFT‐LCDs are driven by ZnO TFTs using the same driving scheme of conventional AMLCDs.</description><subject>AMLCDs</subject><subject>thin-film transistor (TFT)</subject><subject>top gate</subject><subject>Transparent oxide semiconductor</subject><subject>zinc oxide (ZnO)</subject><subject>ZnO TFT</subject><issn>1071-0922</issn><issn>1938-3657</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><recordid>eNp1j0tPAjEURhujiYgu_AddyqLQ153SJQFBDA-NGI2bprQzOjowpJ0o-OsdA3Hn6t7FOV9yELpktM26Xd1hbS6BgYQj1GBadIlIQB3XP1WMUM35KTqL8Z1SnoBMGuh6Vn6mBa7KDXm1VYq_87XD5Tb3Ka7e8jXJ8mKFq2DXMY9VGSK-elnP8WK4iC2clQH3ppP-IJ6jk8wWMb043CZ6HF4v-jdkMh-N-70JcUIJRoSwXoHlSlvnpQdKJQchAYTm2mrJHQDziXMg_DJLLMsS4anPpHZLaqUXTdTa77pQxhjSzGxCvrJhZxg1v_2GmUN_zXb27FdepLv_QXP7MB4wSVltkL1Rp6bbP8OGD5MoocA8zUbmXlFx9zwFQ8UP8I1oFw</recordid><startdate>200701</startdate><enddate>200701</enddate><creator>Hirao, Takashi</creator><creator>Furuta, Mamoru</creator><creator>Furuta, Hiroshi</creator><creator>Matsuda, Tokiyoshi</creator><creator>Hiramatsu, Takahiro</creator><creator>Hokari, Hitoshi</creator><creator>Yoshida, Motohiko</creator><creator>Ishii, Hiromitsu</creator><creator>Kakegawa, Masayuki</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>200701</creationdate><title>Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs</title><author>Hirao, Takashi ; Furuta, Mamoru ; Furuta, Hiroshi ; Matsuda, Tokiyoshi ; Hiramatsu, Takahiro ; Hokari, Hitoshi ; Yoshida, Motohiko ; Ishii, Hiromitsu ; Kakegawa, Masayuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3731-33ad75a279acd4d50042534553929a942c551d6cc53dbf6a1f63d0df49cb0a4d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>AMLCDs</topic><topic>thin-film transistor (TFT)</topic><topic>top gate</topic><topic>Transparent oxide semiconductor</topic><topic>zinc oxide (ZnO)</topic><topic>ZnO TFT</topic><toplevel>online_resources</toplevel><creatorcontrib>Hirao, Takashi</creatorcontrib><creatorcontrib>Furuta, Mamoru</creatorcontrib><creatorcontrib>Furuta, Hiroshi</creatorcontrib><creatorcontrib>Matsuda, Tokiyoshi</creatorcontrib><creatorcontrib>Hiramatsu, Takahiro</creatorcontrib><creatorcontrib>Hokari, Hitoshi</creatorcontrib><creatorcontrib>Yoshida, Motohiko</creatorcontrib><creatorcontrib>Ishii, Hiromitsu</creatorcontrib><creatorcontrib>Kakegawa, Masayuki</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>Journal of the Society for Information Display</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hirao, Takashi</au><au>Furuta, Mamoru</au><au>Furuta, Hiroshi</au><au>Matsuda, Tokiyoshi</au><au>Hiramatsu, Takahiro</au><au>Hokari, Hitoshi</au><au>Yoshida, Motohiko</au><au>Ishii, Hiromitsu</au><au>Kakegawa, Masayuki</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs</atitle><jtitle>Journal of the Society for Information Display</jtitle><date>2007-01</date><risdate>2007</risdate><volume>15</volume><issue>1</issue><spage>17</spage><epage>22</epage><pages>17-22</pages><issn>1071-0922</issn><eissn>1938-3657</eissn><abstract>— High‐performance top‐gate thin‐film transistors (TFTs) with a transparent zinc oxide (ZnO) channel have been developed. 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| ispartof | Journal of the Society for Information Display, 2007-01, Vol.15 (1), p.17-22 |
| issn | 1071-0922 1938-3657 |
| language | eng |
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| source | Wiley Journals |
| subjects | AMLCDs thin-film transistor (TFT) top gate Transparent oxide semiconductor zinc oxide (ZnO) ZnO TFT |
| title | Novel top-gate zinc oxide thin-film transistors (ZnO TFTs) for AMLCDs |
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