P-13: New Design of Advanced H-IPS(AH-IPS) Panel for High Aperture Ratio

P-13: New Design of Advanced H-IPS(AH-IPS) Panel for High Aperture Ratio

We designed the new pixel layout of the AH‐IPS, which has similar aperture ratio to the IPS with organic insulator. To improve the aperture ratio without organic insulator, we positioned the pixel electrode over the preceding gate on the base of the H‐IPS structure and minimized the width of pixel a...

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Veröffentlicht in:SID International Symposium Digest of technical papers 2006-06, Vol.37 (1), p.238-240
Hauptverfasser: Lee, Doyoung, Kim, Do-Sung, Kang, Byung-Goo, Kim, Eui-Tae, Kim, Junghan, Lim, Byung Ho, Ahn, Byung Chul
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container_issue 1
container_start_page 238
container_title SID International Symposium Digest of technical papers
container_volume 37
creator Lee, Doyoung
Kim, Do-Sung
Kang, Byung-Goo
Kim, Eui-Tae
Kim, Junghan
Lim, Byung Ho
Ahn, Byung Chul
description We designed the new pixel layout of the AH‐IPS, which has similar aperture ratio to the IPS with organic insulator. To improve the aperture ratio without organic insulator, we positioned the pixel electrode over the preceding gate on the base of the H‐IPS structure and minimized the width of pixel and common electrodes. Additionally, we used a TCO (Transparent Conducting Oxide) as the common electrode. This AH‐IPS can provide high aperture ratio and flexible design.
doi_str_mv 10.1889/1.2433464
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title P-13: New Design of Advanced H-IPS(AH-IPS) Panel for High Aperture Ratio
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