64.3: Amorphous Silicon Thin-Film Transistor Backplane on Stainless Steel Foil Substrates for AMOLEDs

We developed a hydrogenated amorphous silicon (a‐Si:H) thin‐film transistor (TFT) process on stainless steel (SS) foil substrates for high uniformity of TFT characteristics. The a‐Si:H TFTs with channel length of 5μm showed a mobility of ∼0.3cm2/Vs and a threshold voltage of ∼4.5 V, which are simila...

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Veröffentlicht in:	SID International Symposium Digest of technical papers 2006-06, Vol.37 (1), p.1862-1865
Hauptverfasser:	Hong, Yongtaek, Heiler, Gregory, Kerr, Roger, Kattamis, Alex Z., Cheng, I-Chun, Wagner, Sigurd
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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