Threshold-voltage recovery of a-Si:H digital circuits

Threshold-voltage recovery of a-Si:H digital circuits

— A‐Si:H thin‐film transistors demonstrate threshold voltage recovery of several volts after room‐temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a‐Si:H digital circuits is examined and is shown to be strictly limited....

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Veröffentlicht in:Journal of the Society for Information Display 2006-11, Vol.14 (11), p.1053-1057
Hauptverfasser: Venugopal, Sameer M., Allee, David R., Li, Zi, Clark, Lawrence T.
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous silicon
circuit aging
thin-film transistor
threshold-voltage shift
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Zusammenfassung:— A‐Si:H thin‐film transistors demonstrate threshold voltage recovery of several volts after room‐temperature rest with no applied voltage. The extent to which this phenomenon can be used to extend the operational lifetime of a‐Si:H digital circuits is examined and is shown to be strictly limited.
ISSN:1071-0922
1938-3657
DOI:10.1889/1.2393030