Peripheral circuit designs using low-temperature p-type poly-Si thin-film transistors

— P‐type low‐temperature (450°C) polycrystalline‐silicon thin‐film‐transistor circuits for peripheral driver integration in active‐matrix displays are proposed and verified. A low‐voltage (5 V) driven poly‐Si scan driver is designed by employing a level shifter and shift register. A source driver fo...

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Veröffentlicht in:Journal of the Society for Information Display 2006-04, Vol.14 (4), p.403-409
Hauptverfasser: Nam, Woo-Jin, Lee, Jae-Hoon, Lee, Hye-Jin, Shin, Hee-Sun, Han, Min-Koo
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container_issue 4
container_start_page 403
container_title Journal of the Society for Information Display
container_volume 14
creator Nam, Woo-Jin
Lee, Jae-Hoon
Lee, Hye-Jin
Shin, Hee-Sun
Han, Min-Koo
description — P‐type low‐temperature (450°C) polycrystalline‐silicon thin‐film‐transistor circuits for peripheral driver integration in active‐matrix displays are proposed and verified. A low‐voltage (5 V) driven poly‐Si scan driver is designed by employing a level shifter and shift register. A source driver for six‐bit digital interface is proposed, and the building blocks such as latch, DAC, and analog buffer are described. The latch samples and holds the digital bits (D and D') without an output voltage loss. A new source‐follower type analog buffer is developed and exhibits a small offset deviation regardless of the VTH variation of the buffer TFT. The simulation and measurement results ensure that the proposed circuits were successfully designed for p‐type panel integration.
doi_str_mv 10.1889/1.2196517
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source Wiley Journals
subjects analog buffer
latch
level shifter
LTPS
p-type
poly-Si
shift register
SOG
title Peripheral circuit designs using low-temperature p-type poly-Si thin-film transistors
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