InGaP/GaAs HBTs Operate as Light-Emitting Transistor

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Veröffentlicht in:MRS bulletin 2004-02, Vol.29 (2), p.78-79
1. Verfasser: Zinn, Alfred A.
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container_end_page 79
container_issue 2
container_start_page 78
container_title MRS bulletin
container_volume 29
creator Zinn, Alfred A.
description
doi_str_mv 10.1557/mrs2004.29
format Article
fullrecord <record><control><sourceid>cambridge_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1557_mrs2004_29</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><cupid>10_1557_mrs2004_29</cupid><sourcerecordid>10_1557_mrs2004_29</sourcerecordid><originalsourceid>FETCH-LOGICAL-c301t-b01f078cb9a0d82dc03a16d54c541e3552ab30e09817f6436693d0195470844c3</originalsourceid><addsrcrecordid>eNptj71OwzAYRS0EEqWw8ASZEW4_x_9jKSUtRCqIMFtO4pQUklZ2kMrbE9SIiekuR0f3IHRNYEI4l9PGhxiATWJ9gkZEU4UJi_kpGoFSFEuh2Tm6CGELQDhIPkJs1Sb2eZrYWYiWd1mI1nvnbeciG6K03rx3eNHUXVe3myjztg116Hb-Ep1V9jO4q2HH6O1hkc2XOF0nq_ksxQUF0uEcSAVSFbm2UKq4LIBaIkrOCs6Io5zHNqfgQCsiK8GoEJqWQDRnEhRjBR2jm6O38LsQvKvM3teN9d-GgPntNUOviXUP4yPcX3SHP9L6DyMkldyI5MWo18flE0hh7nv-dpDbJvd1uXFmu_vybR_0n_4He39jYg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>InGaP/GaAs HBTs Operate as Light-Emitting Transistor</title><source>SpringerLink Journals</source><creator>Zinn, Alfred A.</creator><creatorcontrib>Zinn, Alfred A.</creatorcontrib><identifier>ISSN: 0883-7694</identifier><identifier>EISSN: 1938-1425</identifier><identifier>DOI: 10.1557/mrs2004.29</identifier><language>eng</language><publisher>New York, USA: Cambridge University Press</publisher><subject>Research/Researchers</subject><ispartof>MRS bulletin, 2004-02, Vol.29 (2), p.78-79</ispartof><rights>Copyright © Materials Research Society 2004</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Zinn, Alfred A.</creatorcontrib><title>InGaP/GaAs HBTs Operate as Light-Emitting Transistor</title><title>MRS bulletin</title><addtitle>MRS Bull</addtitle><subject>Research/Researchers</subject><issn>0883-7694</issn><issn>1938-1425</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNptj71OwzAYRS0EEqWw8ASZEW4_x_9jKSUtRCqIMFtO4pQUklZ2kMrbE9SIiekuR0f3IHRNYEI4l9PGhxiATWJ9gkZEU4UJi_kpGoFSFEuh2Tm6CGELQDhIPkJs1Sb2eZrYWYiWd1mI1nvnbeciG6K03rx3eNHUXVe3myjztg116Hb-Ep1V9jO4q2HH6O1hkc2XOF0nq_ksxQUF0uEcSAVSFbm2UKq4LIBaIkrOCs6Io5zHNqfgQCsiK8GoEJqWQDRnEhRjBR2jm6O38LsQvKvM3teN9d-GgPntNUOviXUP4yPcX3SHP9L6DyMkldyI5MWo18flE0hh7nv-dpDbJvd1uXFmu_vybR_0n_4He39jYg</recordid><startdate>20040201</startdate><enddate>20040201</enddate><creator>Zinn, Alfred A.</creator><general>Cambridge University Press</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20040201</creationdate><title>InGaP/GaAs HBTs Operate as Light-Emitting Transistor</title><author>Zinn, Alfred A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c301t-b01f078cb9a0d82dc03a16d54c541e3552ab30e09817f6436693d0195470844c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Research/Researchers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zinn, Alfred A.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><jtitle>MRS bulletin</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zinn, Alfred A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaP/GaAs HBTs Operate as Light-Emitting Transistor</atitle><jtitle>MRS bulletin</jtitle><addtitle>MRS Bull</addtitle><date>2004-02-01</date><risdate>2004</risdate><volume>29</volume><issue>2</issue><spage>78</spage><epage>79</epage><pages>78-79</pages><issn>0883-7694</issn><eissn>1938-1425</eissn><cop>New York, USA</cop><pub>Cambridge University Press</pub><doi>10.1557/mrs2004.29</doi><tpages>2</tpages><oa>free_for_read</oa></addata></record>
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1938-1425
language eng
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title InGaP/GaAs HBTs Operate as Light-Emitting Transistor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T06%3A26%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-cambridge_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InGaP/GaAs%20HBTs%20Operate%20as%20Light-Emitting%20Transistor&rft.jtitle=MRS%20bulletin&rft.au=Zinn,%20Alfred%20A.&rft.date=2004-02-01&rft.volume=29&rft.issue=2&rft.spage=78&rft.epage=79&rft.pages=78-79&rft.issn=0883-7694&rft.eissn=1938-1425&rft_id=info:doi/10.1557/mrs2004.29&rft_dat=%3Ccambridge_cross%3E10_1557_mrs2004_29%3C/cambridge_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_cupid=10_1557_mrs2004_29&rfr_iscdi=true