Misfit strain relaxations of (101)-oriented ferroelectric PbTiO 3 /(La, Sr)(Al, Ta)O 3 thin film systems

High-index ferroelectric thin films show excellent dielectricity, piezoelectricity and switching behaviors. Understanding the misfit strain relaxation behavior may prove beneficial to gaining insights into the high-quality growth of high-index ferroelectric films. In this study, ferroelectric PbTiO...

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Veröffentlicht in:Journal of materials research 2018-12, Vol.33 (24), p.4156-4164
Hauptverfasser: Feng, Yanpeng, Tang, Yunlong, Zhu, Yinlian, Zou, Minjie, Ma, Xiuliang
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container_issue 24
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Tang, Yunlong
Zhu, Yinlian
Zou, Minjie
Ma, Xiuliang
description High-index ferroelectric thin films show excellent dielectricity, piezoelectricity and switching behaviors. Understanding the misfit strain relaxation behavior may prove beneficial to gaining insights into the high-quality growth of high-index ferroelectric films. In this study, ferroelectric PbTiO 3 thin films were deposited on the (101)-oriented (La, Sr)(Al, Ta)O 3 substrate by pulsed laser deposition and were investigated using (scanning) transmission electron microscopy. Two types of misfit dislocations with line directions of 〈111〉 and [010] were found at the interface. The 〈111〉 dislocation exhibited Burgers vectors of a [011] or $a\left[ {0\bar{1}1} \right]$ , while the [010] dislocation featured Burgers vectors of $a\left[ {\bar{1}01} \right]$ . The former might be generated by gliding, and the latter by climbing. We propose that the misfit strain relaxation in this film system basically results from the formation of dislocations and the residual misfit strain is relaxed via the formation of 90° ac domains.
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title Misfit strain relaxations of (101)-oriented ferroelectric PbTiO 3 /(La, Sr)(Al, Ta)O 3 thin film systems
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