New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type A III B V on sapphire substrates

We propose the use of a buffer sublayer made of materials with crystal structure of cubic syngony to eliminate 30° in-plane rotation of (0001) heteroepitaxial wurtzite type A III B V nitride films with respect to the (0001) or (11 0) working surface of the sapphire substrate. In these cases, the lat...

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Veröffentlicht in:	MRS Internet journal of nitride semiconductor research 1999, Vol.4 (1), Article e13
Hauptverfasser:	Kotelyanskii, M.J., Kotelyanskii, I.M., Kravchenko, V.B.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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