18 O study of the oxidation of reactively sputtered Ti 1− x Al x N barrier

The preparation of high-permittivity perovskite materials requires high-temperature (550–750 °C) oxidizing environments, providing stringent limitations on the choice of electrode materials. To minimize interdiffusion and oxidation reactions, an electrically conductive diffusion barrier such as Ti 1− x Al x N is needed below the electrode material (Pt, IrO 2 , RuO 2 …). Ti 1− x Al x N films were deposited by multitarget reactive sputtering in a mixture of Ar and N 2 . The stability of these films has been investigated under typical conditions for crystallization of perovskite dielectrics. Sample composition was characterized using Rutherford backscattering spectroscopy and nuclear reaction analysis. In particular, the concentration depth profiles of both 18 O and 27 Al were measured before and after RTA treatments via the narrow resonances of 18 O(p,α) 15 N at 151 keV (FWHM = 100 eV) and 27 Al(p,γ) 28 Si at 992 keV (FWHM = 100 eV). The different 18O excitation curves show that the oxidation resistance increases with Al incorporation. The Al excitation curves indicate a uniform Al content for as-deposited Ti x Al 1− x N and reveal Al diffusion to the surface during the oxidation process which indicates the formation of an Al-rich oxide layer at the Ti x Al 1− x N surface, leaving a layer depleted in Al below it.