Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications

Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications

A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNx from the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45...

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Veröffentlicht in:Journal of materials research 1999-05, Vol.14 (5), p.2043-2052
Hauptverfasser: Chen, Xiaomeng, Peterson, Gregory G., Goldberg, Cindy, Nuesca, Gerry, Frisch, Harry L., Kaloyeros, Alain E., Arkles, Barry, Sullivan, John
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container_end_page 2052
container_issue 5
container_start_page 2043
container_title Journal of materials research
container_volume 14
creator Chen, Xiaomeng
Peterson, Gregory G.
Goldberg, Cindy
Nuesca, Gerry
Frisch, Harry L.
Kaloyeros, Alain E.
Arkles, Barry
Sullivan, John
description A low-temperature (>450 °C) thermal chemical vapor deposition (CVD) process was developed for the growth of TaNx from the reaction of tantalum pentabromide, ammonia, and hydrogen. Studies of process reaction kinetics yielded two sequential rate-controlling steps, with an activation energy of 0.45 eV for the kinetically limited reaction regime. Additionally, a systematic design of experiments approach examined the effects of key process parameters, namely, substrate temperature, source temperature, and hydrogen and ammonia flows, on film properties. A wide CVD process window was established for nitrogen-rich amorphous TaNx with contamination below 1 at.%. Film conformality was higher than 95% in nominally 0.30 μm, 4.5: 1 aspect ratio, trench structures.
doi_str_mv 10.1557/JMR.1999.0276
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title Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications
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