Performance Enhancement of an Integrated SiC JFET and GaN HEMT 5-kW T-Type Inverter for Vehicle-to-Grid and Grid-to-Vehicle Technology

This study investigates the performance of wide-bandgap-based devices integrated into a bidirectional T-type inverter topology for vehicle-to-grid (V2G) and grid-to-vehicle (G2V) applications. The designed structure incorporates wide-bandgap semiconductor devices, specifically, 1700 V-rated SiC JFET...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEJ JOURNAL OF INDUSTRY APPLICATIONS 2024, pp.24004484
Hauptverfasser: Kasim, Resma Kalandar, Robert, Femi
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!