Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons
Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime...
Gespeichert in:
| Veröffentlicht in: | Ukrainian journal of physics (Kiev) 2012-01, Vol.57 (5), p.525 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | 5 |
| container_start_page | 525 |
| container_title | Ukrainian journal of physics (Kiev) |
| container_volume | 57 |
| creator | Pagava, T.A. Khocholava, D.Z. Maisuradze, N.I. Chkhartishvili, L.S. |
| description | Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime of minority charge carriers τ, the specific resistance ρ, the hole concentration p, and the Hall mobility μH on the isochronous annealing temperature Tann, theannealing-induced features in the behavior of p and μH are revealed. We determined which radiation-induced defects are recombination centers. From the curves of isochronous annealing carried out during various time intervals, the activation energies of annealing, Eann, are determined for a number of radiation-induced defects. |
| doi_str_mv | 10.15407/ujpe57.5.525 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_15407_ujpe57_5_525</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_15407_ujpe57_5_525</sourcerecordid><originalsourceid>FETCH-LOGICAL-c193t-9bee9395f8c63479443179c937bceaea018fea1c5fef21ea1a94657e6f0d84763</originalsourceid><addsrcrecordid>eNo9kE1LAzEYhIMoWKtH7_kDuyabr81RStVCQbF68BSy2TeY0u4uSYrsv3dri6eZw8wwPAjdU1JSwYl6OGwHEKoUpajEBZpVRNGCUM0v_30tr9FNSltCpORUzdDXJh_aEfcev4Pr903obA59h23X4uUOXI7B4bfYDxBzgHQMDsUm4EUcU7a7hFcx2jbYDC3-Cfn7XOq7dIuu_BSAu7PO0efT8mPxUqxfn1eLx3XhqGa50A2AZlr42knGleacUaWdZqpxYMFOnz1Y6oQHX9HJWc2lUCA9aWuuJJuj4rTrYp9SBG-GGPY2joYS88fFnLgYYSYu7Bd2Tlf4</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons</title><source>Alma/SFX Local Collection</source><creator>Pagava, T.A. ; Khocholava, D.Z. ; Maisuradze, N.I. ; Chkhartishvili, L.S.</creator><creatorcontrib>Pagava, T.A. ; Khocholava, D.Z. ; Maisuradze, N.I. ; Chkhartishvili, L.S.</creatorcontrib><description>Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime of minority charge carriers τ, the specific resistance ρ, the hole concentration p, and the Hall mobility μH on the isochronous annealing temperature Tann, theannealing-induced features in the behavior of p and μH are revealed. We determined which radiation-induced defects are recombination centers. From the curves of isochronous annealing carried out during various time intervals, the activation energies of annealing, Eann, are determined for a number of radiation-induced defects.</description><identifier>ISSN: 2071-0186</identifier><identifier>EISSN: 2071-0194</identifier><identifier>DOI: 10.15407/ujpe57.5.525</identifier><language>eng</language><ispartof>Ukrainian journal of physics (Kiev), 2012-01, Vol.57 (5), p.525</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c193t-9bee9395f8c63479443179c937bceaea018fea1c5fef21ea1a94657e6f0d84763</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Pagava, T.A.</creatorcontrib><creatorcontrib>Khocholava, D.Z.</creatorcontrib><creatorcontrib>Maisuradze, N.I.</creatorcontrib><creatorcontrib>Chkhartishvili, L.S.</creatorcontrib><title>Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons</title><title>Ukrainian journal of physics (Kiev)</title><description>Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime of minority charge carriers τ, the specific resistance ρ, the hole concentration p, and the Hall mobility μH on the isochronous annealing temperature Tann, theannealing-induced features in the behavior of p and μH are revealed. We determined which radiation-induced defects are recombination centers. From the curves of isochronous annealing carried out during various time intervals, the activation energies of annealing, Eann, are determined for a number of radiation-induced defects.</description><issn>2071-0186</issn><issn>2071-0194</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEYhIMoWKtH7_kDuyabr81RStVCQbF68BSy2TeY0u4uSYrsv3dri6eZw8wwPAjdU1JSwYl6OGwHEKoUpajEBZpVRNGCUM0v_30tr9FNSltCpORUzdDXJh_aEfcev4Pr903obA59h23X4uUOXI7B4bfYDxBzgHQMDsUm4EUcU7a7hFcx2jbYDC3-Cfn7XOq7dIuu_BSAu7PO0efT8mPxUqxfn1eLx3XhqGa50A2AZlr42knGleacUaWdZqpxYMFOnz1Y6oQHX9HJWc2lUCA9aWuuJJuj4rTrYp9SBG-GGPY2joYS88fFnLgYYSYu7Bd2Tlf4</recordid><startdate>20120101</startdate><enddate>20120101</enddate><creator>Pagava, T.A.</creator><creator>Khocholava, D.Z.</creator><creator>Maisuradze, N.I.</creator><creator>Chkhartishvili, L.S.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20120101</creationdate><title>Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons</title><author>Pagava, T.A. ; Khocholava, D.Z. ; Maisuradze, N.I. ; Chkhartishvili, L.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c193t-9bee9395f8c63479443179c937bceaea018fea1c5fef21ea1a94657e6f0d84763</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Pagava, T.A.</creatorcontrib><creatorcontrib>Khocholava, D.Z.</creatorcontrib><creatorcontrib>Maisuradze, N.I.</creatorcontrib><creatorcontrib>Chkhartishvili, L.S.</creatorcontrib><collection>CrossRef</collection><jtitle>Ukrainian journal of physics (Kiev)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pagava, T.A.</au><au>Khocholava, D.Z.</au><au>Maisuradze, N.I.</au><au>Chkhartishvili, L.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons</atitle><jtitle>Ukrainian journal of physics (Kiev)</jtitle><date>2012-01-01</date><risdate>2012</risdate><volume>57</volume><issue>5</issue><spage>525</spage><pages>525-</pages><issn>2071-0186</issn><eissn>2071-0194</eissn><abstract>Specimens of p-Si irradiated with 8-MeV electrons have been studied. Various radiation-induced defects have been identified by analyzing the temperature dependences of the hole concentration and the curves of isochronous annealing of irradiated specimens. By analyzing the dependences of the lifetime of minority charge carriers τ, the specific resistance ρ, the hole concentration p, and the Hall mobility μH on the isochronous annealing temperature Tann, theannealing-induced features in the behavior of p and μH are revealed. We determined which radiation-induced defects are recombination centers. From the curves of isochronous annealing carried out during various time intervals, the activation energies of annealing, Eann, are determined for a number of radiation-induced defects.</abstract><doi>10.15407/ujpe57.5.525</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2071-0186 |
| ispartof | Ukrainian journal of physics (Kiev), 2012-01, Vol.57 (5), p.525 |
| issn | 2071-0186 2071-0194 |
| language | eng |
| recordid | cdi_crossref_primary_10_15407_ujpe57_5_525 |
| source | Alma/SFX Local Collection |
| title | Study of Recombination and Electric Properties of p-Si Crystals Irradiated with Electrons |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T15%3A16%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20Recombination%20and%20Electric%20Properties%20of%20p-Si%20Crystals%20Irradiated%20with%20Electrons&rft.jtitle=Ukrainian%20journal%20of%20physics%20(Kiev)&rft.au=Pagava,%20T.A.&rft.date=2012-01-01&rft.volume=57&rft.issue=5&rft.spage=525&rft.pages=525-&rft.issn=2071-0186&rft.eissn=2071-0194&rft_id=info:doi/10.15407/ujpe57.5.525&rft_dat=%3Ccrossref%3E10_15407_ujpe57_5_525%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |