Background donor concentration in HgCdTe

Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Opto-electronics review 2015-09, Vol.23 (3), p.200-207
Hauptverfasser:	Izhnin, I.I., Mynbaev, K.D., Voitsekhovsky, A.V., Korotaev, A.G., Fitsych, O.I., Pociask−Bialy, M., Dvoretsky, S.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	background doping donor impurities HgCdTe ion milling
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!