Background donor concentration in HgCdTe
Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam...
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| Veröffentlicht in: | Opto-electronics review 2015-09, Vol.23 (3), p.200-207 |
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| creator | Izhnin, I.I. Mynbaev, K.D. Voitsekhovsky, A.V. Korotaev, A.G. Fitsych, O.I. Pociask−Bialy, M. Dvoretsky, S.A. |
| description | Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10
cm
was revealed. Films grown with metal−organic chemical vapour deposition and with MBE on GaAs substrates showed BDC of the order of ~10
cm
. A possibility of assessing the BDC in acceptor (arsenic)−doped HgCdTe was demon− strated. In general, the studies showed the effectiveness of ion milling as a method of reducing electrical compensation in n−type MCT and as an excellent tool for assisting evaluation of BDC. |
| doi_str_mv | 10.1515/oere-2015-0029 |
| format | Article |
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cm
was revealed. Films grown with metal−organic chemical vapour deposition and with MBE on GaAs substrates showed BDC of the order of ~10
cm
. A possibility of assessing the BDC in acceptor (arsenic)−doped HgCdTe was demon− strated. In general, the studies showed the effectiveness of ion milling as a method of reducing electrical compensation in n−type MCT and as an excellent tool for assisting evaluation of BDC.</description><identifier>ISSN: 1230-3402</identifier><identifier>EISSN: 1896-3757</identifier><identifier>DOI: 10.1515/oere-2015-0029</identifier><language>eng</language><publisher>De Gruyter Open</publisher><subject>background doping ; donor impurities ; HgCdTe ; ion milling</subject><ispartof>Opto-electronics review, 2015-09, Vol.23 (3), p.200-207</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c332t-825a5819fc41c5bec16e7f9354dde16979c98dc14c77cf80b7de23ef1714ec283</citedby><cites>FETCH-LOGICAL-c332t-825a5819fc41c5bec16e7f9354dde16979c98dc14c77cf80b7de23ef1714ec283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.degruyter.com/document/doi/10.1515/oere-2015-0029/pdf$$EPDF$$P50$$Gwalterdegruyter$$H</linktopdf><linktohtml>$$Uhttps://www.degruyter.com/document/doi/10.1515/oere-2015-0029/html$$EHTML$$P50$$Gwalterdegruyter$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,67158,68942</link.rule.ids></links><search><creatorcontrib>Izhnin, I.I.</creatorcontrib><creatorcontrib>Mynbaev, K.D.</creatorcontrib><creatorcontrib>Voitsekhovsky, A.V.</creatorcontrib><creatorcontrib>Korotaev, A.G.</creatorcontrib><creatorcontrib>Fitsych, O.I.</creatorcontrib><creatorcontrib>Pociask−Bialy, M.</creatorcontrib><creatorcontrib>Dvoretsky, S.A.</creatorcontrib><title>Background donor concentration in HgCdTe</title><title>Opto-electronics review</title><description>Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10
cm
was revealed. Films grown with metal−organic chemical vapour deposition and with MBE on GaAs substrates showed BDC of the order of ~10
cm
. A possibility of assessing the BDC in acceptor (arsenic)−doped HgCdTe was demon− strated. In general, the studies showed the effectiveness of ion milling as a method of reducing electrical compensation in n−type MCT and as an excellent tool for assisting evaluation of BDC.</description><subject>background doping</subject><subject>donor impurities</subject><subject>HgCdTe</subject><subject>ion milling</subject><issn>1230-3402</issn><issn>1896-3757</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp1jzFPwzAQhS0EEqWwMmdkcbmz4zqWWCACilSJpcxWer5ULcVGTirUf0-isjK9t3xP7xPiFmGGBs194sxSARoJoNyZmGDl5lJbY8-HrjRIXYK6FFddtwMoLVg7EXdPDX1ucjrEUIQUUy4oReLY56bfplhsY7HY1GHF1-KibfYd3_zlVHy8PK_qhVy-v77Vj0tJWqteVso0pkLXUolk1kw4Z9s6bcoQGOfOOnJVICzJWmorWNvASnOLFksmVempmJ12Kaeuy9z677z9avLRI_jR04-efvT0o-cAPJyAn2bfcw68yYfjUPwuHXIcrv4DquEvgP4FAI1Zqg</recordid><startdate>20150901</startdate><enddate>20150901</enddate><creator>Izhnin, I.I.</creator><creator>Mynbaev, K.D.</creator><creator>Voitsekhovsky, A.V.</creator><creator>Korotaev, A.G.</creator><creator>Fitsych, O.I.</creator><creator>Pociask−Bialy, M.</creator><creator>Dvoretsky, S.A.</creator><general>De Gruyter Open</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20150901</creationdate><title>Background donor concentration in HgCdTe</title><author>Izhnin, I.I. ; Mynbaev, K.D. ; Voitsekhovsky, A.V. ; Korotaev, A.G. ; Fitsych, O.I. ; Pociask−Bialy, M. ; Dvoretsky, S.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c332t-825a5819fc41c5bec16e7f9354dde16979c98dc14c77cf80b7de23ef1714ec283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>background doping</topic><topic>donor impurities</topic><topic>HgCdTe</topic><topic>ion milling</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Izhnin, I.I.</creatorcontrib><creatorcontrib>Mynbaev, K.D.</creatorcontrib><creatorcontrib>Voitsekhovsky, A.V.</creatorcontrib><creatorcontrib>Korotaev, A.G.</creatorcontrib><creatorcontrib>Fitsych, O.I.</creatorcontrib><creatorcontrib>Pociask−Bialy, M.</creatorcontrib><creatorcontrib>Dvoretsky, S.A.</creatorcontrib><collection>CrossRef</collection><jtitle>Opto-electronics review</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Izhnin, I.I.</au><au>Mynbaev, K.D.</au><au>Voitsekhovsky, A.V.</au><au>Korotaev, A.G.</au><au>Fitsych, O.I.</au><au>Pociask−Bialy, M.</au><au>Dvoretsky, S.A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Background donor concentration in HgCdTe</atitle><jtitle>Opto-electronics review</jtitle><date>2015-09-01</date><risdate>2015</risdate><volume>23</volume><issue>3</issue><spage>200</spage><epage>207</epage><pages>200-207</pages><issn>1230-3402</issn><eissn>1896-3757</eissn><abstract>Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10
cm
was revealed. Films grown with metal−organic chemical vapour deposition and with MBE on GaAs substrates showed BDC of the order of ~10
cm
. A possibility of assessing the BDC in acceptor (arsenic)−doped HgCdTe was demon− strated. In general, the studies showed the effectiveness of ion milling as a method of reducing electrical compensation in n−type MCT and as an excellent tool for assisting evaluation of BDC.</abstract><pub>De Gruyter Open</pub><doi>10.1515/oere-2015-0029</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
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| source | Walter De Gruyter: Open Access Journals |
| subjects | background doping donor impurities HgCdTe ion milling |
| title | Background donor concentration in HgCdTe |
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