Heavily Si-doped InAs photoluminescence measurements

In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 10 cm to 2.93 × 10 cm . All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the tempera...

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Veröffentlicht in:	Materials science--Poland 2017-10, Vol.35 (3), p.647-650
Hauptverfasser:	Grodecki, Kacper, Murawski, Krzysztof, Henig, Aleksandra, Michalczewski, Krystian, Benyahia, Djalal, Kubiszyn, Łukasz, Martyniuk, Piotr
Format:	Artikel
Sprache:	eng
Schlagworte:	Burstein-Moss heavy doping In As photoluminescence
Online-Zugang:	Volltext
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