Heavily Si-doped InAs photoluminescence measurements
In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 10 cm to 2.93 × 10 cm . All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the tempera...
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| Veröffentlicht in: | Materials science--Poland 2017-10, Vol.35 (3), p.647-650 |
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| container_title | Materials science--Poland |
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| creator | Grodecki, Kacper Murawski, Krzysztof Henig, Aleksandra Michalczewski, Krystian Benyahia, Djalal Kubiszyn, Łukasz Martyniuk, Piotr |
| description | In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 10
cm
to 2.93 × 10
cm
. All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the temperature range of 20 K to 100 K. Although the Mott transition in InAs appears for electron concentrations above 10
cm
, Burstein-Moss broadening of photoluminescence spectra presented in this article was observed only for samples with concentration higher than 2 × 10
cm
. For the samples with lower concentrations two peaks were observed, arising from the band gap and defect states. The intensity of the defect peak was found to be decreasing with increasing temperature as well as increasing concentration, up to the point of disappearance when the Burstein-Moss broadening was visible. |
| doi_str_mv | 10.1515/msp-2017-0075 |
| format | Article |
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cm
to 2.93 × 10
cm
. All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the temperature range of 20 K to 100 K. Although the Mott transition in InAs appears for electron concentrations above 10
cm
, Burstein-Moss broadening of photoluminescence spectra presented in this article was observed only for samples with concentration higher than 2 × 10
cm
. For the samples with lower concentrations two peaks were observed, arising from the band gap and defect states. The intensity of the defect peak was found to be decreasing with increasing temperature as well as increasing concentration, up to the point of disappearance when the Burstein-Moss broadening was visible.</description><identifier>ISSN: 2083-134X</identifier><identifier>EISSN: 2083-134X</identifier><identifier>DOI: 10.1515/msp-2017-0075</identifier><language>eng</language><publisher>De Gruyter Open</publisher><subject>Burstein-Moss ; heavy doping ; In As ; photoluminescence</subject><ispartof>Materials science--Poland, 2017-10, Vol.35 (3), p.647-650</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-93a13090ac1c8edaa958db0c37e2c5e2fb83ab4e8cfe6ecfa3c98ef7e1986fa03</citedby><cites>FETCH-LOGICAL-c328t-93a13090ac1c8edaa958db0c37e2c5e2fb83ab4e8cfe6ecfa3c98ef7e1986fa03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.degruyter.com/document/doi/10.1515/msp-2017-0075/pdf$$EPDF$$P50$$Gwalterdegruyter$$Hfree_for_read</linktopdf><linktohtml>$$Uhttps://www.degruyter.com/document/doi/10.1515/msp-2017-0075/html$$EHTML$$P50$$Gwalterdegruyter$$Hfree_for_read</linktohtml><link.rule.ids>314,776,780,27901,27902,66901,68685</link.rule.ids></links><search><creatorcontrib>Grodecki, Kacper</creatorcontrib><creatorcontrib>Murawski, Krzysztof</creatorcontrib><creatorcontrib>Henig, Aleksandra</creatorcontrib><creatorcontrib>Michalczewski, Krystian</creatorcontrib><creatorcontrib>Benyahia, Djalal</creatorcontrib><creatorcontrib>Kubiszyn, Łukasz</creatorcontrib><creatorcontrib>Martyniuk, Piotr</creatorcontrib><title>Heavily Si-doped InAs photoluminescence measurements</title><title>Materials science--Poland</title><description>In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 10
cm
to 2.93 × 10
cm
. All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the temperature range of 20 K to 100 K. Although the Mott transition in InAs appears for electron concentrations above 10
cm
, Burstein-Moss broadening of photoluminescence spectra presented in this article was observed only for samples with concentration higher than 2 × 10
cm
. For the samples with lower concentrations two peaks were observed, arising from the band gap and defect states. The intensity of the defect peak was found to be decreasing with increasing temperature as well as increasing concentration, up to the point of disappearance when the Burstein-Moss broadening was visible.</description><subject>Burstein-Moss</subject><subject>heavy doping</subject><subject>In As</subject><subject>photoluminescence</subject><issn>2083-134X</issn><issn>2083-134X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1j81OwzAQhC0EElXpkXtewLCO48QRp6oCWqkSB0DiZm2cNaTKn-wElLcnVXvgwl5mDjOj_Ri7FXAnlFD3Teh5DCLjAJm6YIsYtORCJh-Xf_w1W4VwgPlSrSARC5ZsCb-reopeK152PZXRrl2HqP_qhq4em6qlYKm1FDWEYfTUUDuEG3blsA60OuuSvT89vm22fP_yvNus99zKWA88lygk5IBWWE0lYq50WYCVGcVWUewKLbFISFtHKVmH0uaaXEYi16lDkEvGT7vWdyF4cqb3VYN-MgLMkdrM1OZIbY7Uc_7hlP_BeiBf0qcfp9mYQzf6dv70n56SaZLJXwM4X7g</recordid><startdate>20171020</startdate><enddate>20171020</enddate><creator>Grodecki, Kacper</creator><creator>Murawski, Krzysztof</creator><creator>Henig, Aleksandra</creator><creator>Michalczewski, Krystian</creator><creator>Benyahia, Djalal</creator><creator>Kubiszyn, Łukasz</creator><creator>Martyniuk, Piotr</creator><general>De Gruyter Open</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20171020</creationdate><title>Heavily Si-doped InAs photoluminescence measurements</title><author>Grodecki, Kacper ; Murawski, Krzysztof ; Henig, Aleksandra ; Michalczewski, Krystian ; Benyahia, Djalal ; Kubiszyn, Łukasz ; Martyniuk, Piotr</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c328t-93a13090ac1c8edaa958db0c37e2c5e2fb83ab4e8cfe6ecfa3c98ef7e1986fa03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Burstein-Moss</topic><topic>heavy doping</topic><topic>In As</topic><topic>photoluminescence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Grodecki, Kacper</creatorcontrib><creatorcontrib>Murawski, Krzysztof</creatorcontrib><creatorcontrib>Henig, Aleksandra</creatorcontrib><creatorcontrib>Michalczewski, Krystian</creatorcontrib><creatorcontrib>Benyahia, Djalal</creatorcontrib><creatorcontrib>Kubiszyn, Łukasz</creatorcontrib><creatorcontrib>Martyniuk, Piotr</creatorcontrib><collection>CrossRef</collection><jtitle>Materials science--Poland</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Grodecki, Kacper</au><au>Murawski, Krzysztof</au><au>Henig, Aleksandra</au><au>Michalczewski, Krystian</au><au>Benyahia, Djalal</au><au>Kubiszyn, Łukasz</au><au>Martyniuk, Piotr</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Heavily Si-doped InAs photoluminescence measurements</atitle><jtitle>Materials science--Poland</jtitle><date>2017-10-20</date><risdate>2017</risdate><volume>35</volume><issue>3</issue><spage>647</spage><epage>650</epage><pages>647-650</pages><issn>2083-134X</issn><eissn>2083-134X</eissn><abstract>In this paper, we present experimental results of photoluminescence for series of InAs:Si heavily doped samples, with doping level varying from 1.6 × 10
cm
to 2.93 × 10
cm
. All samples were grown using MBE system equipped with a valved arsenic cracker. The measurements were performed in the temperature range of 20 K to 100 K. Although the Mott transition in InAs appears for electron concentrations above 10
cm
, Burstein-Moss broadening of photoluminescence spectra presented in this article was observed only for samples with concentration higher than 2 × 10
cm
. For the samples with lower concentrations two peaks were observed, arising from the band gap and defect states. The intensity of the defect peak was found to be decreasing with increasing temperature as well as increasing concentration, up to the point of disappearance when the Burstein-Moss broadening was visible.</abstract><pub>De Gruyter Open</pub><doi>10.1515/msp-2017-0075</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| source | De Gruyter Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Free Full-Text Journals in Chemistry |
| subjects | Burstein-Moss heavy doping In As photoluminescence |
| title | Heavily Si-doped InAs photoluminescence measurements |
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