Oxide-ion conduction and dielectric relaxation in the fluorite-type Zr0.8Ln0.2O1.9 (Ln = Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu) system

Oxide-ion conduction and dielectric relaxation in the fluorite-type Zr0.8Ln0.2O1.9 (Ln = Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu) system

The electrical conductivity and dielectric properties of the Zr0.8Ln0.2O1.9 (Ln = Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu) system which have a cubic fluorite-type structure were investigated in order to clarify a dynamic property of oxygen vacancy in oxide-ion conductors. The frequency dependences of...

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Veröffentlicht in:Transactions of the Materials Research Society of Japan 2010/09/01, Vol.35(3), pp.655-658
Hauptverfasser: Kawamoto, Jun-ichi, Yagi, Yuhji, Satake, Jun, Takayama, Toshio, Yamamura, Hiroshi
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Dielectric relaxation
Fluorite-type compound
Oxide-ion conduction
Oxygen defect
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container_title Transactions of the Materials Research Society of Japan
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creator Kawamoto, Jun-ichi
Yagi, Yuhji
Satake, Jun
Takayama, Toshio
Yamamura, Hiroshi
description The electrical conductivity and dielectric properties of the Zr0.8Ln0.2O1.9 (Ln = Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu) system which have a cubic fluorite-type structure were investigated in order to clarify a dynamic property of oxygen vacancy in oxide-ion conductors. The frequency dependences of dielectric constants (εr') were successfully explained by the superposition of Debye-type polarizations and electrolyte-electrode interfacial polarizations. The ac conductivity (σac) agreed with the calculated values using the dielectric parameters. It was found that the compositional dependence of dielectric properties was similar to that of σac.
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subjects Dielectric relaxation
Fluorite-type compound
Oxide-ion conduction
Oxygen defect
title Oxide-ion conduction and dielectric relaxation in the fluorite-type Zr0.8Ln0.2O1.9 (Ln = Nd, Sm, Eu, Gd, Dy, Ho, Er, Tm, Yb, Lu) system
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