Graphene Formation on a 3C-SiC(111) Thin Film Grown on Si(110) Substrate

With its industrial adaptability, epitaxial graphene (EG), formed by a UHV annealing of SiC substrates, is attracting recent attention. While hexagonal SiC bulk substrates have been solely used for this purpose, benefits in use of 3C-SiC virtual substrate founded on Si substrates could be enormous....

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Veröffentlicht in:	E-journal of surface science and nanotechnology 2009/04/04, Vol.7, pp.311-313
Hauptverfasser:	Suemitsu, Maki, Miyamoto, Yu, Handa, Hiroyuki, Konno, Atsushi
Format:	Artikel
Sprache:	eng
Schlagworte:	Graphite Molecular beam epitaxy Raman scattering spectroscopy Silicon Silicon carbide
Online-Zugang:	Volltext
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