Ge-on-Si modulators operating at mid-infrared wavelengths up to 8  μm

Ge-on-Si modulators operating at mid-infrared wavelengths up to 8  μm

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Veröffentlicht in:Photonics research (Washington, DC) DC), 2019-08, Vol.7 (8), p.828
Hauptverfasser: Li, Tiantian, Nedeljkovic, Milos, Hattasan, Nannicha, Cao, Wei, Qu, Zhibo, Littlejohns, Callum G., Penades, Jordi Soler, Mastronardi, Lorenzo, Mittal, Vinita, Benedikovic, Daniel, Thomson, David J., Gardes, Frederic Y., Wu, Hequan, Zhou, Zhiping, Mashanovich, Goran Z.
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container_issue 8
container_start_page 828
container_title Photonics research (Washington, DC)
container_volume 7
creator Li, Tiantian
Nedeljkovic, Milos
Hattasan, Nannicha
Cao, Wei
Qu, Zhibo
Littlejohns, Callum G.
Penades, Jordi Soler
Mastronardi, Lorenzo
Mittal, Vinita
Benedikovic, Daniel
Thomson, David J.
Gardes, Frederic Y.
Wu, Hequan
Zhou, Zhiping
Mashanovich, Goran Z.
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doi_str_mv 10.1364/PRJ.7.000828
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title Ge-on-Si modulators operating at mid-infrared wavelengths up to 8  μm
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