Characterization of field-effect mobility at optical frequency by microring resonators
A novel characterization method is proposed to extract the optical frequency field-effect mobility ( μ op , FE ) of transparent conductive oxide (TCO) materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide ( ITiO ) / SiO 2 / silicon metal–oxi...
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| Veröffentlicht in: | Photonics research (Washington, DC) DC), 2021-04, Vol.9 (4), p.615 |
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| creator | Hsu, Wei-Che Li, Erwen Zhou, Bokun Wang, Alan X. |
| description | A novel characterization method is proposed to extract the optical frequency field-effect mobility (
μ
op
,
FE
) of transparent conductive oxide (TCO) materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide
(
ITiO
)
/
SiO
2
/
silicon
metal–oxide–semiconductor (MOS) capacitor. By operating the microring in the accumulation mode, the quality factor and resonance wavelength shift are measured and subsequently used to derive the
μ
op
,
FE
in the ultra-thin accumulation layer. Experimental results demonstrate that the
μ
op
,
FE
of ITiO increases from 25.3 to
38.4
cm
2
⋅
V
−
1
⋅
s
−
1
with increasing gate voltages, which shows a similar trend as that at the electric frequency. |
| doi_str_mv | 10.1364/PRJ.416656 |
| format | Article |
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μ
op
,
FE
) of transparent conductive oxide (TCO) materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide
(
ITiO
)
/
SiO
2
/
silicon
metal–oxide–semiconductor (MOS) capacitor. By operating the microring in the accumulation mode, the quality factor and resonance wavelength shift are measured and subsequently used to derive the
μ
op
,
FE
in the ultra-thin accumulation layer. Experimental results demonstrate that the
μ
op
,
FE
of ITiO increases from 25.3 to
38.4
cm
2
⋅
V
−
1
⋅
s
−
1
with increasing gate voltages, which shows a similar trend as that at the electric frequency.</description><identifier>ISSN: 2327-9125</identifier><identifier>EISSN: 2327-9125</identifier><identifier>DOI: 10.1364/PRJ.416656</identifier><language>eng</language><ispartof>Photonics research (Washington, DC), 2021-04, Vol.9 (4), p.615</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c231t-23592288fd3e909cb92c6fc9b29e0dfde3ff0f8deb12a0d91ec6cac7cfb4c8583</citedby><cites>FETCH-LOGICAL-c231t-23592288fd3e909cb92c6fc9b29e0dfde3ff0f8deb12a0d91ec6cac7cfb4c8583</cites><orcidid>0000-0002-2387-2501</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,3247,27911,27912</link.rule.ids></links><search><creatorcontrib>Hsu, Wei-Che</creatorcontrib><creatorcontrib>Li, Erwen</creatorcontrib><creatorcontrib>Zhou, Bokun</creatorcontrib><creatorcontrib>Wang, Alan X.</creatorcontrib><title>Characterization of field-effect mobility at optical frequency by microring resonators</title><title>Photonics research (Washington, DC)</title><description>A novel characterization method is proposed to extract the optical frequency field-effect mobility (
μ
op
,
FE
) of transparent conductive oxide (TCO) materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide
(
ITiO
)
/
SiO
2
/
silicon
metal–oxide–semiconductor (MOS) capacitor. By operating the microring in the accumulation mode, the quality factor and resonance wavelength shift are measured and subsequently used to derive the
μ
op
,
FE
in the ultra-thin accumulation layer. Experimental results demonstrate that the
μ
op
,
FE
of ITiO increases from 25.3 to
38.4
cm
2
⋅
V
−
1
⋅
s
−
1
with increasing gate voltages, which shows a similar trend as that at the electric frequency.</description><issn>2327-9125</issn><issn>2327-9125</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNpNkMtOwzAURC0EElXphi_wGinFj8SNl6jiUVQJhIBt5NzcC0ZpXGyzCF9PUFkwm5nV0egwdi7FUmpTXj4-3S9LaUxljthMabUqrFTV8b99yhYpfYgptpS6MjP2un530UHG6L9d9mHggTh57LsCiRAy34XW9z6P3GUe9tmD6zlF_PzCAUbejnznIYbohzceMYXB5RDTGTsh1ydc_PWcvdxcP6_viu3D7WZ9tS1AaZkLpSurVF1Tp9EKC61VYAhsqyyKjjrURILqDlupnOisRDDgYAXUllBXtZ6ziwN3upBSRGr20e9cHBspml8pzSSlOUjRP7DIVx0</recordid><startdate>20210401</startdate><enddate>20210401</enddate><creator>Hsu, Wei-Che</creator><creator>Li, Erwen</creator><creator>Zhou, Bokun</creator><creator>Wang, Alan X.</creator><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-2387-2501</orcidid></search><sort><creationdate>20210401</creationdate><title>Characterization of field-effect mobility at optical frequency by microring resonators</title><author>Hsu, Wei-Che ; Li, Erwen ; Zhou, Bokun ; Wang, Alan X.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c231t-23592288fd3e909cb92c6fc9b29e0dfde3ff0f8deb12a0d91ec6cac7cfb4c8583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Hsu, Wei-Che</creatorcontrib><creatorcontrib>Li, Erwen</creatorcontrib><creatorcontrib>Zhou, Bokun</creatorcontrib><creatorcontrib>Wang, Alan X.</creatorcontrib><collection>CrossRef</collection><jtitle>Photonics research (Washington, DC)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Hsu, Wei-Che</au><au>Li, Erwen</au><au>Zhou, Bokun</au><au>Wang, Alan X.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of field-effect mobility at optical frequency by microring resonators</atitle><jtitle>Photonics research (Washington, DC)</jtitle><date>2021-04-01</date><risdate>2021</risdate><volume>9</volume><issue>4</issue><spage>615</spage><pages>615-</pages><issn>2327-9125</issn><eissn>2327-9125</eissn><abstract>A novel characterization method is proposed to extract the optical frequency field-effect mobility (
μ
op
,
FE
) of transparent conductive oxide (TCO) materials by a tunable silicon microring resonator with a heterogeneously integrated titanium-doped indium oxide
(
ITiO
)
/
SiO
2
/
silicon
metal–oxide–semiconductor (MOS) capacitor. By operating the microring in the accumulation mode, the quality factor and resonance wavelength shift are measured and subsequently used to derive the
μ
op
,
FE
in the ultra-thin accumulation layer. Experimental results demonstrate that the
μ
op
,
FE
of ITiO increases from 25.3 to
38.4
cm
2
⋅
V
−
1
⋅
s
−
1
with increasing gate voltages, which shows a similar trend as that at the electric frequency.</abstract><doi>10.1364/PRJ.416656</doi><orcidid>https://orcid.org/0000-0002-2387-2501</orcidid></addata></record> |
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| ispartof | Photonics research (Washington, DC), 2021-04, Vol.9 (4), p.615 |
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| language | eng |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Optica Publishing Group Journals |
| title | Characterization of field-effect mobility at optical frequency by microring resonators |
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