Monolithic growth of GaAs laser diodes on Si(001) by optimal AlAs nucleation with thermal cycle annealing

A GaAs quantum-well laser diode was directly grown on silicon (001) substrate by a hybrid technique comprising AlAs nucleation and thermal cycle annealing. The hybrid technique provided the advantages of superior surface roughness, high quantum efficiency, and low threading dislocation density (TDD)...

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Veröffentlicht in:	Optical materials express 2021-03, Vol.11 (3), p.943
Hauptverfasser:	Ko, Young-Ho, Kim, Kap-Joong, Han, Won Seok
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Channeling Continuous radiation Current density Diodes Dislocation density Epitaxial growth Epitaxial layers Gallium arsenide lasers Lasers Light sources Metalorganic chemical vapor deposition Nucleation Quantum efficiency Quantum well lasers Room temperature Semiconductor lasers Silicon substrates Surface roughness Thickness Threading dislocations Threshold currents
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