Gate-controlled Sb 2 S 3 thin film photodetectors for logic switches

Antimony sulfide (Sb 2 S 3 ) photodetectors (PDs) have great potential in commercial applications. The performances are affected by photocarrier distribution and recombination. Here, the gate-controlled Sb 2 S 3 thin film PD is fabricated on the TiO 2 /SiO 2 /Si substrate by the vacuum method. The p-channel Sb 2 S 3 transistor obtained a threshold voltage of 0.6 V and a switching ratio of 1064, achieving an effective regulation by gate voltages. A negative gate voltage can enhance conductivity and can suppress recombination. The responsivity and detectivity of the PD reach 1.6 A/W and 1.2 × 10 11 Jones, respectively. The device realizes logic outputs by the signal inputs of illumination and gate voltage.