Photonic properties of InGaN-based micro LEDs in the cryogenic temperature regime
InGaN/GaN-based micro LEDs ranging from 2 to 100 microns were characterized at cryogenic temperatures to reveal their temperature-dependent photonic properties. An atomic layer deposition technique was applied to passivate the sidewall of the device to enable photon emission of the 2-micron micro LE...
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Veröffentlicht in: | Optics express 2024-12, Vol.32 (25), p.44898 |
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description | InGaN/GaN-based micro LEDs ranging from 2 to 100 microns were characterized at cryogenic temperatures to reveal their temperature-dependent photonic properties. An atomic layer deposition technique was applied to passivate the sidewall of the device to enable photon emission of the 2-micron micro LEDs. The size-dependent Shockley-Read-Hall coefficients are extracted via the external quantum efficiency measurements under different temperatures. The micro LEDs’ numerically fitted surface recombination velocity can be as low as 117.85 cm/sec. The emission peak photon energy revealed a non-monotonic variation across the 80 K-300 K temperature range. This behavior closely resembles the S-shaped temperature dependence of the emission peak due to carrier distribution in localized states in InGaN active regions. This localization effect, however, would be reduced when the injected current level increases and the temperature increases beyond 200 K. |
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An atomic layer deposition technique was applied to passivate the sidewall of the device to enable photon emission of the 2-micron micro LEDs. The size-dependent Shockley-Read-Hall coefficients are extracted via the external quantum efficiency measurements under different temperatures. The micro LEDs’ numerically fitted surface recombination velocity can be as low as 117.85 cm/sec. The emission peak photon energy revealed a non-monotonic variation across the 80 K-300 K temperature range. This behavior closely resembles the S-shaped temperature dependence of the emission peak due to carrier distribution in localized states in InGaN active regions. This localization effect, however, would be reduced when the injected current level increases and the temperature increases beyond 200 K.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.543951</identifier><language>eng</language><ispartof>Optics express, 2024-12, Vol.32 (25), p.44898</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c704-618ebed5aa3e095133710163b8cdc231a9176b6b80fc392e102410979e76eae53</cites><orcidid>0000-0002-5761-2177 ; 0000-0001-8656-1922</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,864,27923,27924</link.rule.ids></links><search><creatorcontrib>Chang, Hao-Jen</creatorcontrib><creatorcontrib>Chiang, Ke-Hsi</creatorcontrib><creatorcontrib>Jao, Yu-Ming</creatorcontrib><creatorcontrib>Wang, Yuan-Chao</creatorcontrib><creatorcontrib>Shih, Min-Hsiung</creatorcontrib><creatorcontrib>Kuo, Hao-Chung</creatorcontrib><creatorcontrib>Huang, Jian-Jang</creatorcontrib><creatorcontrib>Lin, Chien-Chung</creatorcontrib><title>Photonic properties of InGaN-based micro LEDs in the cryogenic temperature regime</title><title>Optics express</title><description>InGaN/GaN-based micro LEDs ranging from 2 to 100 microns were characterized at cryogenic temperatures to reveal their temperature-dependent photonic properties. An atomic layer deposition technique was applied to passivate the sidewall of the device to enable photon emission of the 2-micron micro LEDs. The size-dependent Shockley-Read-Hall coefficients are extracted via the external quantum efficiency measurements under different temperatures. The micro LEDs’ numerically fitted surface recombination velocity can be as low as 117.85 cm/sec. The emission peak photon energy revealed a non-monotonic variation across the 80 K-300 K temperature range. This behavior closely resembles the S-shaped temperature dependence of the emission peak due to carrier distribution in localized states in InGaN active regions. 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An atomic layer deposition technique was applied to passivate the sidewall of the device to enable photon emission of the 2-micron micro LEDs. The size-dependent Shockley-Read-Hall coefficients are extracted via the external quantum efficiency measurements under different temperatures. The micro LEDs’ numerically fitted surface recombination velocity can be as low as 117.85 cm/sec. The emission peak photon energy revealed a non-monotonic variation across the 80 K-300 K temperature range. This behavior closely resembles the S-shaped temperature dependence of the emission peak due to carrier distribution in localized states in InGaN active regions. This localization effect, however, would be reduced when the injected current level increases and the temperature increases beyond 200 K.</abstract><doi>10.1364/OE.543951</doi><orcidid>https://orcid.org/0000-0002-5761-2177</orcidid><orcidid>https://orcid.org/0000-0001-8656-1922</orcidid></addata></record> |
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title | Photonic properties of InGaN-based micro LEDs in the cryogenic temperature regime |
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