GaAs Q-switched Nd:CNGG lasers: operating at 4 F 3/2 → 2 I 11/2 and 4 F 3/2 → 2 I 13/2 transitions
The nonlinear absorption properties of GaAs were measured at 1.06 and 1.34 µm by the open aperture Z-scan technique in this paper. Based on a neodymium doped calcium niobium gallium garnet (Nd:CNGG) disordered crystal grown by the Czochralski method, passively Q-switched lasers with the conventional...
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| Veröffentlicht in: | Optics express 2019-05, Vol.27 (11), p.15426 |
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| container_issue | 11 |
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| container_title | Optics express |
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| creator | Pan, Han Pan, Zhongben Chu, Hongwei Li, Ying Zhao, Shengzhi Li, Guiqiu Cai, Huaqiang Li, Dechun |
| description | The nonlinear absorption properties of GaAs were measured at 1.06 and 1.34 µm by the open aperture Z-scan technique in this paper. Based on a neodymium doped calcium niobium gallium garnet (Nd:CNGG) disordered crystal grown by the Czochralski method, passively Q-switched lasers with the conventional GaAs wafer as the saturable absorber were demonstrated, operating on the transitions of
F
→
I
and
F
→
I
. For the
F
→
I
transition, the laser operated at 1063 nm with a pulse duration of 546 ns and a repetition rate of 98.5 kHz. While for the
F
→
I
transition operating at 1340 nm, the minimum pulse width was 499.6 ns with the pulse repetition rate of 110.7 kHz. |
| doi_str_mv | 10.1364/OE.27.015426 |
| format | Article |
| fullrecord | <record><control><sourceid>pubmed_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1364_OE_27_015426</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>31163739</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1039-e9e784372a91ceb78124e793a24f26f834e05ed33aa3af97ef8074211fa968313</originalsourceid><addsrcrecordid>eNplkMFKw0AURQdRbK3uXMt8gEnnzZtmMt2V0sZCaRF0HV6TGY20aZmJSH_AD_AT_RJboiK4uu_yDndxGLsGEQMmqr-cxFLHAgZKJiesC8KoSIlUn_65O-wihBchQGmjz1kHARLUaLrMZTQK_D4Kb1VTPNuSL8rheJFlfE3B-jDk25311FT1E6eGKz7l2Jf88_2DSz7jAIdCdfn_cSyNpzpUTbWtwyU7c7QO9uo7e-xxOnkY30XzZTYbj-ZRAQJNZI3VqUItyUBhVzoFqaw2SFI5mbgUlRUDWyISITmjrUuFVhLAkUlSBOyx23a38NsQvHX5zlcb8vscRH7UlS8nudR5q-uA37T47nW1seUv_OMHvwAjql9V</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>GaAs Q-switched Nd:CNGG lasers: operating at 4 F 3/2 → 2 I 11/2 and 4 F 3/2 → 2 I 13/2 transitions</title><source>DOAJ Directory of Open Access Journals</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Alma/SFX Local Collection</source><creator>Pan, Han ; Pan, Zhongben ; Chu, Hongwei ; Li, Ying ; Zhao, Shengzhi ; Li, Guiqiu ; Cai, Huaqiang ; Li, Dechun</creator><creatorcontrib>Pan, Han ; Pan, Zhongben ; Chu, Hongwei ; Li, Ying ; Zhao, Shengzhi ; Li, Guiqiu ; Cai, Huaqiang ; Li, Dechun</creatorcontrib><description>The nonlinear absorption properties of GaAs were measured at 1.06 and 1.34 µm by the open aperture Z-scan technique in this paper. Based on a neodymium doped calcium niobium gallium garnet (Nd:CNGG) disordered crystal grown by the Czochralski method, passively Q-switched lasers with the conventional GaAs wafer as the saturable absorber were demonstrated, operating on the transitions of
F
→
I
and
F
→
I
. For the
F
→
I
transition, the laser operated at 1063 nm with a pulse duration of 546 ns and a repetition rate of 98.5 kHz. While for the
F
→
I
transition operating at 1340 nm, the minimum pulse width was 499.6 ns with the pulse repetition rate of 110.7 kHz.</description><identifier>ISSN: 1094-4087</identifier><identifier>EISSN: 1094-4087</identifier><identifier>DOI: 10.1364/OE.27.015426</identifier><identifier>PMID: 31163739</identifier><language>eng</language><publisher>United States</publisher><ispartof>Optics express, 2019-05, Vol.27 (11), p.15426</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1039-e9e784372a91ceb78124e793a24f26f834e05ed33aa3af97ef8074211fa968313</citedby><cites>FETCH-LOGICAL-c1039-e9e784372a91ceb78124e793a24f26f834e05ed33aa3af97ef8074211fa968313</cites><orcidid>0000-0002-7965-7069 ; 0000-0002-1231-2381</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,860,27903,27904</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/31163739$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Pan, Han</creatorcontrib><creatorcontrib>Pan, Zhongben</creatorcontrib><creatorcontrib>Chu, Hongwei</creatorcontrib><creatorcontrib>Li, Ying</creatorcontrib><creatorcontrib>Zhao, Shengzhi</creatorcontrib><creatorcontrib>Li, Guiqiu</creatorcontrib><creatorcontrib>Cai, Huaqiang</creatorcontrib><creatorcontrib>Li, Dechun</creatorcontrib><title>GaAs Q-switched Nd:CNGG lasers: operating at 4 F 3/2 → 2 I 11/2 and 4 F 3/2 → 2 I 13/2 transitions</title><title>Optics express</title><addtitle>Opt Express</addtitle><description>The nonlinear absorption properties of GaAs were measured at 1.06 and 1.34 µm by the open aperture Z-scan technique in this paper. Based on a neodymium doped calcium niobium gallium garnet (Nd:CNGG) disordered crystal grown by the Czochralski method, passively Q-switched lasers with the conventional GaAs wafer as the saturable absorber were demonstrated, operating on the transitions of
F
→
I
and
F
→
I
. For the
F
→
I
transition, the laser operated at 1063 nm with a pulse duration of 546 ns and a repetition rate of 98.5 kHz. While for the
F
→
I
transition operating at 1340 nm, the minimum pulse width was 499.6 ns with the pulse repetition rate of 110.7 kHz.</description><issn>1094-4087</issn><issn>1094-4087</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNplkMFKw0AURQdRbK3uXMt8gEnnzZtmMt2V0sZCaRF0HV6TGY20aZmJSH_AD_AT_RJboiK4uu_yDndxGLsGEQMmqr-cxFLHAgZKJiesC8KoSIlUn_65O-wihBchQGmjz1kHARLUaLrMZTQK_D4Kb1VTPNuSL8rheJFlfE3B-jDk25311FT1E6eGKz7l2Jf88_2DSz7jAIdCdfn_cSyNpzpUTbWtwyU7c7QO9uo7e-xxOnkY30XzZTYbj-ZRAQJNZI3VqUItyUBhVzoFqaw2SFI5mbgUlRUDWyISITmjrUuFVhLAkUlSBOyx23a38NsQvHX5zlcb8vscRH7UlS8nudR5q-uA37T47nW1seUv_OMHvwAjql9V</recordid><startdate>20190527</startdate><enddate>20190527</enddate><creator>Pan, Han</creator><creator>Pan, Zhongben</creator><creator>Chu, Hongwei</creator><creator>Li, Ying</creator><creator>Zhao, Shengzhi</creator><creator>Li, Guiqiu</creator><creator>Cai, Huaqiang</creator><creator>Li, Dechun</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-7965-7069</orcidid><orcidid>https://orcid.org/0000-0002-1231-2381</orcidid></search><sort><creationdate>20190527</creationdate><title>GaAs Q-switched Nd:CNGG lasers: operating at 4 F 3/2 → 2 I 11/2 and 4 F 3/2 → 2 I 13/2 transitions</title><author>Pan, Han ; Pan, Zhongben ; Chu, Hongwei ; Li, Ying ; Zhao, Shengzhi ; Li, Guiqiu ; Cai, Huaqiang ; Li, Dechun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1039-e9e784372a91ceb78124e793a24f26f834e05ed33aa3af97ef8074211fa968313</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pan, Han</creatorcontrib><creatorcontrib>Pan, Zhongben</creatorcontrib><creatorcontrib>Chu, Hongwei</creatorcontrib><creatorcontrib>Li, Ying</creatorcontrib><creatorcontrib>Zhao, Shengzhi</creatorcontrib><creatorcontrib>Li, Guiqiu</creatorcontrib><creatorcontrib>Cai, Huaqiang</creatorcontrib><creatorcontrib>Li, Dechun</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>Optics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pan, Han</au><au>Pan, Zhongben</au><au>Chu, Hongwei</au><au>Li, Ying</au><au>Zhao, Shengzhi</au><au>Li, Guiqiu</au><au>Cai, Huaqiang</au><au>Li, Dechun</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaAs Q-switched Nd:CNGG lasers: operating at 4 F 3/2 → 2 I 11/2 and 4 F 3/2 → 2 I 13/2 transitions</atitle><jtitle>Optics express</jtitle><addtitle>Opt Express</addtitle><date>2019-05-27</date><risdate>2019</risdate><volume>27</volume><issue>11</issue><spage>15426</spage><pages>15426-</pages><issn>1094-4087</issn><eissn>1094-4087</eissn><abstract>The nonlinear absorption properties of GaAs were measured at 1.06 and 1.34 µm by the open aperture Z-scan technique in this paper. Based on a neodymium doped calcium niobium gallium garnet (Nd:CNGG) disordered crystal grown by the Czochralski method, passively Q-switched lasers with the conventional GaAs wafer as the saturable absorber were demonstrated, operating on the transitions of
F
→
I
and
F
→
I
. For the
F
→
I
transition, the laser operated at 1063 nm with a pulse duration of 546 ns and a repetition rate of 98.5 kHz. While for the
F
→
I
transition operating at 1340 nm, the minimum pulse width was 499.6 ns with the pulse repetition rate of 110.7 kHz.</abstract><cop>United States</cop><pmid>31163739</pmid><doi>10.1364/OE.27.015426</doi><orcidid>https://orcid.org/0000-0002-7965-7069</orcidid><orcidid>https://orcid.org/0000-0002-1231-2381</orcidid></addata></record> |
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| source | DOAJ Directory of Open Access Journals; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection |
| title | GaAs Q-switched Nd:CNGG lasers: operating at 4 F 3/2 → 2 I 11/2 and 4 F 3/2 → 2 I 13/2 transitions |
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