High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation

Potassium hydroxide (KOH) and ammonium sulfide ( N H 4 ) 2 S x have been used as a surface passivation treatment to improve the electrical and optical performance of AlGaN nanowire ultraviolet (UV) light-emitting diodes (LEDs). Enhancements in photoluminescence at 335 nm (49%), optical output power...

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Veröffentlicht in:	Applied optics (2004) 2020-08, Vol.59 (24), p.7352-7356
Hauptverfasser:	Bui, Ha Quoc Thang, Velpula, Ravi Teja, Jian, Barsha, Philip, Moab Rajan, Tong, Hien Duy, Lenka, Trupti Rajan, Nguyen, Hieu Pham Trung
Format:	Artikel
Sprache:	eng
Schlagworte:	Ammonium sulfides Electroluminescence Light emitting diodes Nanowires Passivity Photoluminescence Potash Potassium Potassium hydroxides Ultraviolet radiation
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container_title	Applied optics (2004)
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creator	Bui, Ha Quoc Thang Velpula, Ravi Teja Jian, Barsha Philip, Moab Rajan Tong, Hien Duy Lenka, Trupti Rajan Nguyen, Hieu Pham Trung
description	Potassium hydroxide (KOH) and ammonium sulfide ( N H 4 ) 2 S x have been used as a surface passivation treatment to improve the electrical and optical performance of AlGaN nanowire ultraviolet (UV) light-emitting diodes (LEDs). Enhancements in photoluminescence at 335 nm (49%), optical output power (65%), and electroluminescence (83%), with respect to the as-grown nanowire LED are recorded for the AlGaN nanowire UV LEDs with surface passivation. These enhancements are attributed to the reduced nonradiative recombination on the nanowire surfaces. This study provides a potential surface passivation approach to produce high-power AlGaN nanowire LEDs operating in the UV spectrum.
doi_str_mv	10.1364/AO.400877
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source	Alma/SFX Local Collection; Optica Publishing Group Journals
subjects	Ammonium sulfides Electroluminescence Light emitting diodes Nanowires Passivity Photoluminescence Potash Potassium Potassium hydroxides Ultraviolet radiation
title	High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation
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