A Kind of Coating Method of GaN-MOCVD Graphite Susceptor

A Kind of Coating Method of GaN-MOCVD Graphite Susceptor

A novel coating method for the GaN-MOCVD graphite susceptor is proposed in the paper, which means that the upper surface and sides of the graphite susceptor are covered with a low emissivity material coating, and the surface under the susceptor is covered with a high emissivity SiC coating. By using...

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Veröffentlicht in:Journal of nanomaterials 2013-01, Vol.2013 (2013), p.1-6
Hauptverfasser: Xi, Zai-fang, Jin, Li, Li, Hai-ou, Hu, Shi-gang, Wu, Xiao-feng, Ying-lu, Hu
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container_end_page 6
container_issue 2013
container_start_page 1
container_title Journal of nanomaterials
container_volume 2013
creator Xi, Zai-fang
Jin, Li
Li, Hai-ou
Hu, Shi-gang
Wu, Xiao-feng
Ying-lu, Hu
description A novel coating method for the GaN-MOCVD graphite susceptor is proposed in the paper, which means that the upper surface and sides of the graphite susceptor are covered with a low emissivity material coating, and the surface under the susceptor is covered with a high emissivity SiC coating. By using finite element analysis software COMSOL Multiphysics, the temperature field of the susceptors without coating, with common SiC coating, and with improved coating is obtained and compared, which shows that the susceptor with the improved coating not only increases the heating efficiency of the heater, but also improves the temperature uniformity of the substrate, which can be of great benefit to the film growth. In addition, this improved coating for the susceptor has the same heating sensitivity as the common SiC coating.
doi_str_mv 10.1155/2013/137564
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title A Kind of Coating Method of GaN-MOCVD Graphite Susceptor
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