Scalable RFCMOS Model for 90 nm Technology

This paper presents the formation of the parasitic components that exist in the RF MOSFET structure during its high-frequency operation. The parasitic components are extracted from the transistor's S-parameter measurement, and its geometry dependence is studied with respect to its layout struct...

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Veröffentlicht in:	International journal of microwave science and technology 2011-12, Vol.2011 (2011), p.1-16
Hauptverfasser:	Tong, Ah Fatt, Lim, Wei Meng, Sia, Choon Beng, Yu, Xiaopeng, Yang, Wanlan, Yeo, Kiat Seng
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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