(Invited) Applications of Oxygen Inserted Epitaxy

Abstract Silicon remains the semiconductor material of choice for most electronic applications of semiconductors and the silicon–silicon dioxide interface is one of the most studied interfaces. Over the past decade or more, epitaxial silicon-germanium (eSiGe) has found increasing applications in adv...

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Veröffentlicht in:Meeting abstracts (Electrochemical Society) 2024-11, Vol.MA2024-02 (32), p.2364-2364
Hauptverfasser: Mears, Robert J, Hytha, Marek, Takeuchi, Hideki
Format: Artikel
Sprache:eng
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Zusammenfassung:Abstract Silicon remains the semiconductor material of choice for most electronic applications of semiconductors and the silicon–silicon dioxide interface is one of the most studied interfaces. Over the past decade or more, epitaxial silicon-germanium (eSiGe) has found increasing applications in advanced logic, first for PMOS compressive source-drain (S/D) stressors, then as a channel material in high-k metal gate (HKMG) devices to help control the PMOS Vt, and more recently as a sacrificial layer to enable stacked nanosheets and even as a S/D liner to reduce phosphorus diffusion into the undoped nanosheets. Oxygen inserted (OI) silicon epitaxy was originally developed to complement and bridge the gap between silicon and silicon-germanium, and it has found applications ranging from improved figure of merit power devices to the most advanced nanosheet applications. In this paper we will provide an overview of OI silicon devices, their fundamental characterization and the electrical and physical benefits offered for a variety of semiconductor applications. Introduction Oxygen-inserted (OI) silicon had an unusual genesis for a semiconductor material, in that it was first explored using ab-initio quantum mechanical simulation. It was found that by carefully inserting a partial monolayer of oxygen during silicon epitaxy a stable layer could be manufactured where the individual oxygen atoms arranged themselves on a silicon-silicon bond, but that overall, the silicon retained its regular lattice, and the silicon-oxygen coordination was only one, as opposed to four in regular silicon dioxide. The idealized lattice configuration is shown in Fig. 1 (a). This configuration is technically thermodynamically metastable, but with a significant energetic barrier to formation of four-fold coordinated silicon dioxide, so that it can survive conventional semiconductor processing. Whereas a single oxygen atom is known to rapidly diffuse in silicon, there is a thermodynamic self-stabilization when the oxygen concentration has an aerial density of the order of 1E15cm -2 , with an upper limit dependent both on the specific epitaxial recipe and the required defect density. If all available silicon bonds have attached oxygen, it is difficult to maintain high quality epitaxy. On the other hand, OI silicon has passed the most rigorous defect density requirements for advanced logic applications. Dopant engineering - simulation Oxygen is highly electronegative, and ab initio simulatio
ISSN:2151-2043
2151-2035
DOI:10.1149/MA2024-02322364mtgabs