Inhibiting Thermal and O 2 Plasma Assisted ALD of SiO 2 using Fluorothiol Passivation Layer on Cu

Inhibiting Thermal and O 2 Plasma Assisted ALD of SiO 2 using Fluorothiol Passivation Layer on Cu

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Veröffentlicht in:Meeting abstracts (Electrochemical Society) 2021-10, Vol.MA2021-02 (29), p.854-854
Hauptverfasser: Kavassery Ramesh, Rohit Narayanan, Xu, Wanxing, Gasvoda, Ryan J, Lei, Xinjian, Derecskei, Agnes, Chandra, Haripin, Jiang, Xuezhong, Liu, Guo, Kanjolia, Ravindra K., Ridgeway, Robert, Zope, Bhushan, Pearlstein, Ronald, Agarwal, Sumit
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container_title Meeting abstracts (Electrochemical Society)
container_volume MA2021-02
creator Kavassery Ramesh, Rohit Narayanan
Xu, Wanxing
Gasvoda, Ryan J
Lei, Xinjian
Derecskei, Agnes
Chandra, Haripin
Jiang, Xuezhong
Liu, Guo
Kanjolia, Ravindra K.
Ridgeway, Robert
Zope, Bhushan
Pearlstein, Ronald
Agarwal, Sumit
description
doi_str_mv 10.1149/MA2021-0229854mtgabs
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title Inhibiting Thermal and O 2 Plasma Assisted ALD of SiO 2 using Fluorothiol Passivation Layer on Cu
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