(Invited) Moderate Temperature Mg Diffusion Doping of GaN

Ex-situ p-type doping of GaN has been a long-standing challenge and prevented adoption of numerous devices. While regrowth of p-GaN on etched surfaces and ion implantation have made progress, technical challenges remain. Diffusion of Mg into GaN has received considerably less attention, primarily du...

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Veröffentlicht in:	Meeting abstracts (Electrochemical Society) 2020-11, Vol.MA2020-02 (26), p.1810-1810
Hauptverfasser:	Voss, Lars F., Frye, Clint D., Allen, Noah A., Harrison, Sarah E., Kweon, Kyoung, Varley, Joel Basile, Lordi, Vincenzo, Nikolic, Rebecca, Anderson, Travis J., Hite, Jennifer K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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