Defects Near c-Si(n ++ )/TiO 2 Interfaces Revealed By Persistent Charging Analysis in Modulated Surface Photovoltage Spectroscopy

Thin layers of semiconductors with wide band gaps (wide gap SCs), such as TiO 2 , are of great interest for the passivation and/or specific activation of semiconductor surfaces in photoelectrochemical (PEC) systems [1]. Defect states in the bulk of wide gap SCs and at related semiconductor hetero-ju...

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Veröffentlicht in:	Meeting abstracts (Electrochemical Society) 2020-05, Vol.MA2020-01 (39), p.1756-1756
Hauptverfasser:	Fengler, Steffen, Kriegel, Herman, Schieda, Mauricio, Gutzmann, Henning, Klassen, Thomas, Dittrich, Thomas
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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