Correlation between Filled Via and Produced Cuprous Ion Concentration by Reverse Current Waveform

To enable low power consumption and the access speed increase, three dimensional packaging of semiconductor chips has been proposed. In particular, a high-aspect ratio through silicon via (TSV) allows short chip to chip interconnection. In this study, we studied the role of produced cuprous ion in v...

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Veröffentlicht in:	Journal of the Electrochemical Society 2013-01, Vol.160 (6), p.D256-D259
Hauptverfasser:	Hayashi, Taro, Kondo, Kazuo, Saito, Takeyasu, Okamoto, Naoki, Yokoi, Masayuki, Takeuchi, Minoru, Bunya, Masaru, Marunaka, Masao, Tsuchiya, Takayuki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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