Physicochemical Analysis and Characterization of Chemical Bath Deposited ZnS Films at Near Ambient Temperature
A physicochemical analysis, based on the species distribution diagrams and the solubility curves, is proposed for CDB-ZnS films deposition. The effect of the temperature and the HS−/Zn(OH)42− ion concentrations on ZnS films formation are discussed. ZnS thin films were deposited by chemical bath depo...
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Veröffentlicht in: | Journal of the Electrochemical Society 2016-01, Vol.163 (8), p.D421-D427 |
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description | A physicochemical analysis, based on the species distribution diagrams and the solubility curves, is proposed for CDB-ZnS films deposition. The effect of the temperature and the HS−/Zn(OH)42− ion concentrations on ZnS films formation are discussed. ZnS thin films were deposited by chemical bath deposition (CBD) technique at near ambient temperatures (25, 40 and 55°C) from ZnCl2/KOH/NH4NO3/SC(NH2)2 solutions. From the physicochemical analysis it was found that by increasing the bath temperature and the [HS−]/[Zn(OH)42−] ratio, better conditions for obtaining ZnS films of good quality are obtained. Chemical, stoichiometric, and structural characterizations of the deposited ZnS thin films are reported. The formation of ZnS and/or Zn(OH)2 compounds, was identified by X-ray photoelectron spectroscopy (XPS) analysis. The stoichiometric [S]/[Zn] ratio of films was measured in a range between 0.22 to 0.77. X-ray diffraction (XRD) results show amorphous structures for almost all the films, excepting for ZnS samples prepared with the high temperature and [HS−]/[Zn(OH)42−] ratio when a cubic sphalerite phase (111) preferential structure was identified. The bandgap energy of the ZnS samples changes from 3.4 to 3.7 eV when the [HS−]/[Zn(OH)42−] ratio is modified. |
doi_str_mv | 10.1149/2.0911608jes |
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J. ; Oliva, A. I.</creator><creatorcontrib>González-Chan, I. J. ; Oliva, A. I.</creatorcontrib><description>A physicochemical analysis, based on the species distribution diagrams and the solubility curves, is proposed for CDB-ZnS films deposition. The effect of the temperature and the HS−/Zn(OH)42− ion concentrations on ZnS films formation are discussed. ZnS thin films were deposited by chemical bath deposition (CBD) technique at near ambient temperatures (25, 40 and 55°C) from ZnCl2/KOH/NH4NO3/SC(NH2)2 solutions. From the physicochemical analysis it was found that by increasing the bath temperature and the [HS−]/[Zn(OH)42−] ratio, better conditions for obtaining ZnS films of good quality are obtained. Chemical, stoichiometric, and structural characterizations of the deposited ZnS thin films are reported. The formation of ZnS and/or Zn(OH)2 compounds, was identified by X-ray photoelectron spectroscopy (XPS) analysis. The stoichiometric [S]/[Zn] ratio of films was measured in a range between 0.22 to 0.77. X-ray diffraction (XRD) results show amorphous structures for almost all the films, excepting for ZnS samples prepared with the high temperature and [HS−]/[Zn(OH)42−] ratio when a cubic sphalerite phase (111) preferential structure was identified. The bandgap energy of the ZnS samples changes from 3.4 to 3.7 eV when the [HS−]/[Zn(OH)42−] ratio is modified.</description><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/2.0911608jes</identifier><language>eng</language><publisher>The Electrochemical Society</publisher><ispartof>Journal of the Electrochemical Society, 2016-01, Vol.163 (8), p.D421-D427</ispartof><rights>2016 The Electrochemical Society</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c268t-503dcc850bca7af87a45a624f0904e1f4cd61d5b1a422d3006553fc30c4eab173</citedby><cites>FETCH-LOGICAL-c268t-503dcc850bca7af87a45a624f0904e1f4cd61d5b1a422d3006553fc30c4eab173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/2.0911608jes/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,4024,27923,27924,27925,53846</link.rule.ids></links><search><creatorcontrib>González-Chan, I. J.</creatorcontrib><creatorcontrib>Oliva, A. I.</creatorcontrib><title>Physicochemical Analysis and Characterization of Chemical Bath Deposited ZnS Films at Near Ambient Temperature</title><title>Journal of the Electrochemical Society</title><addtitle>J. Electrochem. Soc</addtitle><description>A physicochemical analysis, based on the species distribution diagrams and the solubility curves, is proposed for CDB-ZnS films deposition. The effect of the temperature and the HS−/Zn(OH)42− ion concentrations on ZnS films formation are discussed. ZnS thin films were deposited by chemical bath deposition (CBD) technique at near ambient temperatures (25, 40 and 55°C) from ZnCl2/KOH/NH4NO3/SC(NH2)2 solutions. From the physicochemical analysis it was found that by increasing the bath temperature and the [HS−]/[Zn(OH)42−] ratio, better conditions for obtaining ZnS films of good quality are obtained. Chemical, stoichiometric, and structural characterizations of the deposited ZnS thin films are reported. The formation of ZnS and/or Zn(OH)2 compounds, was identified by X-ray photoelectron spectroscopy (XPS) analysis. The stoichiometric [S]/[Zn] ratio of films was measured in a range between 0.22 to 0.77. X-ray diffraction (XRD) results show amorphous structures for almost all the films, excepting for ZnS samples prepared with the high temperature and [HS−]/[Zn(OH)42−] ratio when a cubic sphalerite phase (111) preferential structure was identified. The bandgap energy of the ZnS samples changes from 3.4 to 3.7 eV when the [HS−]/[Zn(OH)42−] ratio is modified.</description><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNptkD1PwzAURS0EEqWw8QM8MpDil9j5GEuhgFQBEmVhiV4cW3GUxJHtDuXXE9RKLExX7-q8OxxCroEtAHhxFy9YAZCyvFX-hMyg4CLKAOCUzBiDJOKpgHNy4X07nZDzbEaG92bvjbSyUb2R2NHlgN3UeIpDTVcNOpRBOfONwdiBWj11R_IeQ0Mf1Gi9CaqmX8MHXZuunz4DfVXo6LKvjBoC3ap-VA7DzqlLcqax8-rqmHPyuX7crp6jzdvTy2q5iWSc5iESLKmlzAWrJGao8wy5wDTmmhWMK9Bc1inUogLkcVwnjKVCJFomTHKFFWTJnNwedqWz3july9GZHt2-BFb-uirj8s_VhN8ccGPHsrU7N0nw_6M_4sFquQ</recordid><startdate>201601</startdate><enddate>201601</enddate><creator>González-Chan, I. J.</creator><creator>Oliva, A. I.</creator><general>The Electrochemical Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201601</creationdate><title>Physicochemical Analysis and Characterization of Chemical Bath Deposited ZnS Films at Near Ambient Temperature</title><author>González-Chan, I. J. ; Oliva, A. I.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c268t-503dcc850bca7af87a45a624f0904e1f4cd61d5b1a422d3006553fc30c4eab173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>González-Chan, I. J.</creatorcontrib><creatorcontrib>Oliva, A. I.</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>González-Chan, I. J.</au><au>Oliva, A. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Physicochemical Analysis and Characterization of Chemical Bath Deposited ZnS Films at Near Ambient Temperature</atitle><jtitle>Journal of the Electrochemical Society</jtitle><addtitle>J. Electrochem. Soc</addtitle><date>2016-01</date><risdate>2016</risdate><volume>163</volume><issue>8</issue><spage>D421</spage><epage>D427</epage><pages>D421-D427</pages><issn>0013-4651</issn><eissn>1945-7111</eissn><abstract>A physicochemical analysis, based on the species distribution diagrams and the solubility curves, is proposed for CDB-ZnS films deposition. The effect of the temperature and the HS−/Zn(OH)42− ion concentrations on ZnS films formation are discussed. ZnS thin films were deposited by chemical bath deposition (CBD) technique at near ambient temperatures (25, 40 and 55°C) from ZnCl2/KOH/NH4NO3/SC(NH2)2 solutions. From the physicochemical analysis it was found that by increasing the bath temperature and the [HS−]/[Zn(OH)42−] ratio, better conditions for obtaining ZnS films of good quality are obtained. Chemical, stoichiometric, and structural characterizations of the deposited ZnS thin films are reported. The formation of ZnS and/or Zn(OH)2 compounds, was identified by X-ray photoelectron spectroscopy (XPS) analysis. The stoichiometric [S]/[Zn] ratio of films was measured in a range between 0.22 to 0.77. X-ray diffraction (XRD) results show amorphous structures for almost all the films, excepting for ZnS samples prepared with the high temperature and [HS−]/[Zn(OH)42−] ratio when a cubic sphalerite phase (111) preferential structure was identified. The bandgap energy of the ZnS samples changes from 3.4 to 3.7 eV when the [HS−]/[Zn(OH)42−] ratio is modified.</abstract><pub>The Electrochemical Society</pub><doi>10.1149/2.0911608jes</doi><tpages>7</tpages></addata></record> |
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title | Physicochemical Analysis and Characterization of Chemical Bath Deposited ZnS Films at Near Ambient Temperature |
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