Cu Bottom-Up Filling for Through Silicon Vias with Growing Surface Established by the Modulation of Leveler and Suppressor

A method is introduced for Cu bottom-up filling at trenches with dimensions similar to those of through silicon via in the presence of three organic additives. The electrodeposition is galvanostatically conducted, and the potential-time curves during the gap-filling and the evolution of deposition p...

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Veröffentlicht in:	Journal of the Electrochemical Society 2013-01, Vol.160 (12), p.D3221-D3227
Hauptverfasser:	Kim, Myung Jun, Kim, Hoe Chul, Choe, Seunghoe, Cho, Ji Yoon, Lee, Donghyung, Jung, Il, Cho, Won-Seob, Kim, Jae Jeong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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