Process to Form V-Grooved Trenches on Patterned Si (001) Substrates Using In Situ Selective Area Etching in a MOCVD Reactor

We here introduce a novel in situ anisotropic etching process to form a V-grooved trench platform on a patterned Si (001) substrate in a metal-organic chemical vapor deposition (MOCVD) reactor. Such V-grooved trenches were realized by in situ baking of a Ga-exposed Si surface at 760°C in a H2/AsH3 a...

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Veröffentlicht in:	ECS journal of solid state science and technology 2016-01, Vol.5 (7), p.P409-P411
Hauptverfasser:	Cho, Young-Dae, Lee, In-Geun, Lee, Joo-Hee, Kim, Sun-Wook, Shin, Chan-Soo, Park, Won-Kyu, Kim, Chung-Yi, Kim, Dae-Hyun, Ko, Dae-Hong
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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