Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors

We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted direct...

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Veröffentlicht in:ECS journal of solid state science and technology 2017-01, Vol.6 (5), p.P217-P226
Hauptverfasser: Russo, Felice, Nardone, Giancarlo, Polignano, Maria Luisa, D'Ercole, Angelo, Pennella, Fabrizio, Felice, Massimo Di, Monte, Andrea Del, Matarazzo, Antonio, Moccia, Giuseppe, Polsinelli, Gianpaolo, D'Angelo, Antonio, Liverani, Massimo, Irrera, Fernanda
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container_end_page P226
container_issue 5
container_start_page P217
container_title ECS journal of solid state science and technology
container_volume 6
creator Russo, Felice
Nardone, Giancarlo
Polignano, Maria Luisa
D'Ercole, Angelo
Pennella, Fabrizio
Felice, Massimo Di
Monte, Andrea Del
Matarazzo, Antonio
Moccia, Giuseppe
Polsinelli, Gianpaolo
D'Angelo, Antonio
Liverani, Massimo
Irrera, Fernanda
description We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. Analyzing the dark current "spectrum" as obtained for fixed integration periods of time by means of standard image-testing equipment, these impurities can be identified and detected with a sensitivity of ∼ 109 traps/cm3 or higher.
doi_str_mv 10.1149/2.0101705jss
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1149_2_0101705jss</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>0101705JSS</sourcerecordid><originalsourceid>FETCH-LOGICAL-c372t-400bd75361a36abb478e11a8f66605118bc02eebd8cc64f99230a732f4237903</originalsourceid><addsrcrecordid>eNptkL1OwzAURi0EElXpxgN4ZCDFf7GdEaVQKrXqkOyW49oogdqRnQ59e4yKBAN3uVf6jq6OPgDuMVpizKonskQYYYHKIaUrMCOYk0IKXl3_uW_BIqUB5eGSCUpmYLXS8QPWpxitn2AzWjPFkEwYzzA42EbtUz_1wcOdnfRngr2H9W7fwM1Rv1vYWJ9CTHfgxuXQLn72HLSvL239Vmz36039vC0MFWQqGELdQZSUY0257jompMVYS8c5RyXGsjOIWNsdpDGcuaoiFOls6RihokJ0Dh4vb01WTNE6Ncb-qONZYaS-O1BE_XaQ8YcL3odRDeEUfXb7H_0CpAhalg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Russo, Felice ; Nardone, Giancarlo ; Polignano, Maria Luisa ; D'Ercole, Angelo ; Pennella, Fabrizio ; Felice, Massimo Di ; Monte, Andrea Del ; Matarazzo, Antonio ; Moccia, Giuseppe ; Polsinelli, Gianpaolo ; D'Angelo, Antonio ; Liverani, Massimo ; Irrera, Fernanda</creator><creatorcontrib>Russo, Felice ; Nardone, Giancarlo ; Polignano, Maria Luisa ; D'Ercole, Angelo ; Pennella, Fabrizio ; Felice, Massimo Di ; Monte, Andrea Del ; Matarazzo, Antonio ; Moccia, Giuseppe ; Polsinelli, Gianpaolo ; D'Angelo, Antonio ; Liverani, Massimo ; Irrera, Fernanda</creatorcontrib><description>We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. Analyzing the dark current "spectrum" as obtained for fixed integration periods of time by means of standard image-testing equipment, these impurities can be identified and detected with a sensitivity of ∼ 109 traps/cm3 or higher.</description><identifier>ISSN: 2162-8769</identifier><identifier>EISSN: 2162-8769</identifier><identifier>EISSN: 2162-8777</identifier><identifier>DOI: 10.1149/2.0101705jss</identifier><language>eng</language><publisher>The Electrochemical Society</publisher><ispartof>ECS journal of solid state science and technology, 2017-01, Vol.6 (5), p.P217-P226</ispartof><rights>2017 The Electrochemical Society</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c372t-400bd75361a36abb478e11a8f66605118bc02eebd8cc64f99230a732f4237903</citedby><cites>FETCH-LOGICAL-c372t-400bd75361a36abb478e11a8f66605118bc02eebd8cc64f99230a732f4237903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/2.0101705jss/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,4024,27923,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Russo, Felice</creatorcontrib><creatorcontrib>Nardone, Giancarlo</creatorcontrib><creatorcontrib>Polignano, Maria Luisa</creatorcontrib><creatorcontrib>D'Ercole, Angelo</creatorcontrib><creatorcontrib>Pennella, Fabrizio</creatorcontrib><creatorcontrib>Felice, Massimo Di</creatorcontrib><creatorcontrib>Monte, Andrea Del</creatorcontrib><creatorcontrib>Matarazzo, Antonio</creatorcontrib><creatorcontrib>Moccia, Giuseppe</creatorcontrib><creatorcontrib>Polsinelli, Gianpaolo</creatorcontrib><creatorcontrib>D'Angelo, Antonio</creatorcontrib><creatorcontrib>Liverani, Massimo</creatorcontrib><creatorcontrib>Irrera, Fernanda</creatorcontrib><title>Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors</title><title>ECS journal of solid state science and technology</title><addtitle>ECS J. Solid State Sci. Technol</addtitle><description>We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. Analyzing the dark current "spectrum" as obtained for fixed integration periods of time by means of standard image-testing equipment, these impurities can be identified and detected with a sensitivity of ∼ 109 traps/cm3 or higher.</description><issn>2162-8769</issn><issn>2162-8769</issn><issn>2162-8777</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNptkL1OwzAURi0EElXpxgN4ZCDFf7GdEaVQKrXqkOyW49oogdqRnQ59e4yKBAN3uVf6jq6OPgDuMVpizKonskQYYYHKIaUrMCOYk0IKXl3_uW_BIqUB5eGSCUpmYLXS8QPWpxitn2AzWjPFkEwYzzA42EbtUz_1wcOdnfRngr2H9W7fwM1Rv1vYWJ9CTHfgxuXQLn72HLSvL239Vmz36039vC0MFWQqGELdQZSUY0257jompMVYS8c5RyXGsjOIWNsdpDGcuaoiFOls6RihokJ0Dh4vb01WTNE6Ncb-qONZYaS-O1BE_XaQ8YcL3odRDeEUfXb7H_0CpAhalg</recordid><startdate>201701</startdate><enddate>201701</enddate><creator>Russo, Felice</creator><creator>Nardone, Giancarlo</creator><creator>Polignano, Maria Luisa</creator><creator>D'Ercole, Angelo</creator><creator>Pennella, Fabrizio</creator><creator>Felice, Massimo Di</creator><creator>Monte, Andrea Del</creator><creator>Matarazzo, Antonio</creator><creator>Moccia, Giuseppe</creator><creator>Polsinelli, Gianpaolo</creator><creator>D'Angelo, Antonio</creator><creator>Liverani, Massimo</creator><creator>Irrera, Fernanda</creator><general>The Electrochemical Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201701</creationdate><title>Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors</title><author>Russo, Felice ; Nardone, Giancarlo ; Polignano, Maria Luisa ; D'Ercole, Angelo ; Pennella, Fabrizio ; Felice, Massimo Di ; Monte, Andrea Del ; Matarazzo, Antonio ; Moccia, Giuseppe ; Polsinelli, Gianpaolo ; D'Angelo, Antonio ; Liverani, Massimo ; Irrera, Fernanda</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-400bd75361a36abb478e11a8f66605118bc02eebd8cc64f99230a732f4237903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Russo, Felice</creatorcontrib><creatorcontrib>Nardone, Giancarlo</creatorcontrib><creatorcontrib>Polignano, Maria Luisa</creatorcontrib><creatorcontrib>D'Ercole, Angelo</creatorcontrib><creatorcontrib>Pennella, Fabrizio</creatorcontrib><creatorcontrib>Felice, Massimo Di</creatorcontrib><creatorcontrib>Monte, Andrea Del</creatorcontrib><creatorcontrib>Matarazzo, Antonio</creatorcontrib><creatorcontrib>Moccia, Giuseppe</creatorcontrib><creatorcontrib>Polsinelli, Gianpaolo</creatorcontrib><creatorcontrib>D'Angelo, Antonio</creatorcontrib><creatorcontrib>Liverani, Massimo</creatorcontrib><creatorcontrib>Irrera, Fernanda</creatorcontrib><collection>CrossRef</collection><jtitle>ECS journal of solid state science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Russo, Felice</au><au>Nardone, Giancarlo</au><au>Polignano, Maria Luisa</au><au>D'Ercole, Angelo</au><au>Pennella, Fabrizio</au><au>Felice, Massimo Di</au><au>Monte, Andrea Del</au><au>Matarazzo, Antonio</au><au>Moccia, Giuseppe</au><au>Polsinelli, Gianpaolo</au><au>D'Angelo, Antonio</au><au>Liverani, Massimo</au><au>Irrera, Fernanda</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors</atitle><jtitle>ECS journal of solid state science and technology</jtitle><addtitle>ECS J. Solid State Sci. Technol</addtitle><date>2017-01</date><risdate>2017</risdate><volume>6</volume><issue>5</issue><spage>P217</spage><epage>P226</epage><pages>P217-P226</pages><issn>2162-8769</issn><eissn>2162-8769</eissn><eissn>2162-8777</eissn><abstract>We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. Analyzing the dark current "spectrum" as obtained for fixed integration periods of time by means of standard image-testing equipment, these impurities can be identified and detected with a sensitivity of ∼ 109 traps/cm3 or higher.</abstract><pub>The Electrochemical Society</pub><doi>10.1149/2.0101705jss</doi><tpages>10</tpages><oa>free_for_read</oa></addata></record>
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title Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T06%3A52%3A51IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dark%20Current%20Spectroscopy%20of%20Transition%20Metals%20in%20CMOS%20Image%20Sensors&rft.jtitle=ECS%20journal%20of%20solid%20state%20science%20and%20technology&rft.au=Russo,%20Felice&rft.date=2017-01&rft.volume=6&rft.issue=5&rft.spage=P217&rft.epage=P226&rft.pages=P217-P226&rft.issn=2162-8769&rft.eissn=2162-8769&rft_id=info:doi/10.1149/2.0101705jss&rft_dat=%3Ciop_cross%3E0101705JSS%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true