Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors
We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted direct...
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Veröffentlicht in: | ECS journal of solid state science and technology 2017-01, Vol.6 (5), p.P217-P226 |
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creator | Russo, Felice Nardone, Giancarlo Polignano, Maria Luisa D'Ercole, Angelo Pennella, Fabrizio Felice, Massimo Di Monte, Andrea Del Matarazzo, Antonio Moccia, Giuseppe Polsinelli, Gianpaolo D'Angelo, Antonio Liverani, Massimo Irrera, Fernanda |
description | We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. Analyzing the dark current "spectrum" as obtained for fixed integration periods of time by means of standard image-testing equipment, these impurities can be identified and detected with a sensitivity of ∼ 109 traps/cm3 or higher. |
doi_str_mv | 10.1149/2.0101705jss |
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Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. 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Solid State Sci. Technol</addtitle><description>We have investigated the effects of deliberate heavy metals contamination on dark current and image defects in CMOS Image Sensors (CIS). Analysis of dark current in these imager dice has revealed different behaviors among most important 3d metals present in the process line. We have implanted directly in 3 Mega array pixels the following metals: Cr, V, Cu, Ni, Fe, Ti, Mo, W, Al and Zn. Analyzing the dark current "spectrum" as obtained for fixed integration periods of time by means of standard image-testing equipment, these impurities can be identified and detected with a sensitivity of ∼ 109 traps/cm3 or higher.</description><issn>2162-8769</issn><issn>2162-8769</issn><issn>2162-8777</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNptkL1OwzAURi0EElXpxgN4ZCDFf7GdEaVQKrXqkOyW49oogdqRnQ59e4yKBAN3uVf6jq6OPgDuMVpizKonskQYYYHKIaUrMCOYk0IKXl3_uW_BIqUB5eGSCUpmYLXS8QPWpxitn2AzWjPFkEwYzzA42EbtUz_1wcOdnfRngr2H9W7fwM1Rv1vYWJ9CTHfgxuXQLn72HLSvL239Vmz36039vC0MFWQqGELdQZSUY0257jompMVYS8c5RyXGsjOIWNsdpDGcuaoiFOls6RihokJ0Dh4vb01WTNE6Ncb-qONZYaS-O1BE_XaQ8YcL3odRDeEUfXb7H_0CpAhalg</recordid><startdate>201701</startdate><enddate>201701</enddate><creator>Russo, Felice</creator><creator>Nardone, Giancarlo</creator><creator>Polignano, Maria Luisa</creator><creator>D'Ercole, Angelo</creator><creator>Pennella, Fabrizio</creator><creator>Felice, Massimo Di</creator><creator>Monte, Andrea Del</creator><creator>Matarazzo, Antonio</creator><creator>Moccia, Giuseppe</creator><creator>Polsinelli, Gianpaolo</creator><creator>D'Angelo, Antonio</creator><creator>Liverani, Massimo</creator><creator>Irrera, Fernanda</creator><general>The Electrochemical Society</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201701</creationdate><title>Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors</title><author>Russo, Felice ; Nardone, Giancarlo ; Polignano, Maria Luisa ; D'Ercole, Angelo ; Pennella, Fabrizio ; Felice, Massimo Di ; Monte, Andrea Del ; Matarazzo, Antonio ; Moccia, Giuseppe ; Polsinelli, Gianpaolo ; D'Angelo, Antonio ; Liverani, Massimo ; Irrera, Fernanda</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c372t-400bd75361a36abb478e11a8f66605118bc02eebd8cc64f99230a732f4237903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Russo, Felice</creatorcontrib><creatorcontrib>Nardone, Giancarlo</creatorcontrib><creatorcontrib>Polignano, Maria Luisa</creatorcontrib><creatorcontrib>D'Ercole, Angelo</creatorcontrib><creatorcontrib>Pennella, Fabrizio</creatorcontrib><creatorcontrib>Felice, Massimo Di</creatorcontrib><creatorcontrib>Monte, Andrea Del</creatorcontrib><creatorcontrib>Matarazzo, Antonio</creatorcontrib><creatorcontrib>Moccia, Giuseppe</creatorcontrib><creatorcontrib>Polsinelli, Gianpaolo</creatorcontrib><creatorcontrib>D'Angelo, Antonio</creatorcontrib><creatorcontrib>Liverani, Massimo</creatorcontrib><creatorcontrib>Irrera, Fernanda</creatorcontrib><collection>CrossRef</collection><jtitle>ECS journal of solid state science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Russo, Felice</au><au>Nardone, Giancarlo</au><au>Polignano, Maria Luisa</au><au>D'Ercole, Angelo</au><au>Pennella, Fabrizio</au><au>Felice, Massimo Di</au><au>Monte, Andrea Del</au><au>Matarazzo, Antonio</au><au>Moccia, Giuseppe</au><au>Polsinelli, Gianpaolo</au><au>D'Angelo, Antonio</au><au>Liverani, Massimo</au><au>Irrera, Fernanda</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors</atitle><jtitle>ECS journal of solid state science and technology</jtitle><addtitle>ECS J. 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title | Dark Current Spectroscopy of Transition Metals in CMOS Image Sensors |
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