Single- and Multi-Directional Slanted Plasma Etching of Silicon under Practical Plasma Processing Conditions

A novel plasma etching technique was developed to obtain single- and multi-directional slanted etch profiles of silicon using a Faraday cage system. Etching was performed by a cyclic process consisting of alternating etching and deposition steps using SF6 and C4F8 plasmas, respectively, under practi...

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Veröffentlicht in:	ECS journal of solid state science and technology 2014-01, Vol.3 (11), p.Q215-Q220
Hauptverfasser:	Cho, Sung-Woon, Kim, Jun-Hyun, Kang, Doo Won, Lee, Kangtaek, Kim, Chang-Koo
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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