Behavior of Transition Metals Penetrating Silicon Substrate through SiO 2 and Si 3 N 4 Films by Arsenic Ion Implantation and Annealing

Behavior of Transition Metals Penetrating Silicon Substrate through SiO 2 and Si 3 N 4 Films by Arsenic Ion Implantation and Annealing

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Veröffentlicht in:ECS journal of solid state science and technology 2015, Vol.4 (5), p.P131-P136
Hauptverfasser: Saga, Koichiro, Ohno, Rikiichi, Shibata, Daiki, Kobayashi, Shunsuke, Sueoka, Koji
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container_title ECS journal of solid state science and technology
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creator Saga, Koichiro
Ohno, Rikiichi
Shibata, Daiki
Kobayashi, Shunsuke
Sueoka, Koji
description
doi_str_mv 10.1149/2.0061505jss
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source IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Behavior of Transition Metals Penetrating Silicon Substrate through SiO 2 and Si 3 N 4 Films by Arsenic Ion Implantation and Annealing
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