Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Nanoporous Patterned Sapphire Substrate

The crystal quality and light output power of GaN-based LEDs grown on nanoporous patterned sapphire substrate (NPSS) were investigated. NPSS was prepared using an anodized aluminum oxide (AAO) layer. It was found that the crystal quality of GaN-based LEDs grown on NPSS was better than that on micron...

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Veröffentlicht in:	ECS solid state letters 2014-01, Vol.3 (9), p.R45-R47
Hauptverfasser:	Chen, Chien-Chih, Yap, Chun-Yan, Hsu, Wen-Yang, Kuo, Cheng-Ta, Tsai, Tzong-Liang, Chu, Jui-Yi, Sermon Wu, YewChung
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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