Enhancement-Mode High-Frequency InAlGaN/GaN MIS-HEMT Fabricated by Implementing Oxygen-Based Digital Etching on the Quaternary Layer

A high frequency enhancement mode quaternary InAlGaN/GaN MIS-HEMT with recessed gate (L g = 150 nm) processed using an oxygen-based digital etching technique is presented. The digital etching was performed by cyclic ICP oxygen treatment to oxidize InAlGaN barrier and HCl wet etching to remove the ox...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	ECS journal of solid state science and technology 2022-08, Vol.11 (8), p.85005
Hauptverfasser:	Tsai, Ping-Yu, Nguyen, Hoang-Tan-Ngoc, Nagarajan, Venkatesan, Lin, Chun-Hsiung, Dee, Chang-Fu, Chen, Shih-Chen, Kuo, Hao-Chung, Lee, Ching-Ting, Chang, Edward Yi
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!