Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique

Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique

Owing to the rapid growth of very large-scale integration technology at nanometer scales, cobalt and ruthenium interconnects are being used to solve the high-resistivity copper problem. However, with such interconnects, carbon contamination can occur during chemical vapor deposition and atomic layer...

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Veröffentlicht in:ECS journal of solid state science and technology 2022-03, Vol.11 (3), p.33006
Hauptverfasser: Seo, Min, Cho, Min Kyung, Kang, Un Hyeon, Jeon, Sin Young, Lim, Sang-Ho, Han, Seung Hee
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container_issue 3
container_start_page 33006
container_title ECS journal of solid state science and technology
container_volume 11
creator Seo, Min
Cho, Min Kyung
Kang, Un Hyeon
Jeon, Sin Young
Lim, Sang-Ho
Han, Seung Hee
description Owing to the rapid growth of very large-scale integration technology at nanometer scales, cobalt and ruthenium interconnects are being used to solve the high-resistivity copper problem. However, with such interconnects, carbon contamination can occur during chemical vapor deposition and atomic layer deposition. Bipolar (BP) high-power impulse magnetron sputtering (HiPIMS) with a high ionization rate is an excellent vacuum process for depositing low-resistivity thin films. In this study, low-resistivity cobalt, ruthenium, and copper thin films were deposited using BP-HiPIMS, HiPIMS, and direct-current magnetron sputtering (DCMS). The resistivities of the cobalt, ruthenium, and copper thin films (
doi_str_mv 10.1149/2162-8777/ac5805
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title Low-Resistivity Cobalt and Ruthenium Ultra-Thin Film Deposition Using Bipolar HiPIMS Technique
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