Effects of Ambient and Annealing Temperature in HfO 2 Based RRAM Device Modeling and Circuit-Level Implementation

This article focuses on the relevance of the effect of ambient temperature and annealing in the context of compact modeling of metal oxide resistive random access memory (RRAM) devices. The ambient temperature affects the conduction characteristic of resistive switching memories, so it becomes an es...

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Veröffentlicht in:	ECS journal of solid state science and technology 2022-02, Vol.11 (2), p.23012
Hauptverfasser:	Napolean, A., Sivamangai, N. M., Rajesh, S., Naveenkumar, R., Sharon, N., Nithya, N., Kamalnath, S.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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