Precipitation of Antimony Implanted into Silicon
Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. Post-activation annealings were made at 800 and 900 °C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the...
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| Veröffentlicht in: | ECS transactions 2012-05, Vol.41 (34), p.9-17 |
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| container_issue | 34 |
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| container_title | ECS transactions |
| container_volume | 41 |
| creator | Koffel, Stephane Pichler, Peter Reading, Michael A. Van den Berg, Jakob Kheyrandish, Hamid Hamm, Silke Lerch, Wilfried Pakfar, Ardechir Tavernier, Clement |
| description | Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. Post-activation annealings were made at 800 and 900 °C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the antimony profile does not broaden for moderate thermal budgets. However, during thermal treatments, antimony atoms continuously move towards the surface. There, they pile-up in non-substitutional positions and form precipitates. It was also confirmed that this phenomenon happens after solid phase epitaxy. Possible explanations are discussed. |
| doi_str_mv | 10.1149/1.3697457 |
| format | Article |
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Post-activation annealings were made at 800 and 900 °C with increasing time, to study the deactivation of antimony using a combination of SIMS, MEIS and TEM analyses. It was found that the antimony profile does not broaden for moderate thermal budgets. However, during thermal treatments, antimony atoms continuously move towards the surface. There, they pile-up in non-substitutional positions and form precipitates. It was also confirmed that this phenomenon happens after solid phase epitaxy. Possible explanations are discussed.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/1.3697457</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2012-05, Vol.41 (34), p.9-17</ispartof><rights>2012 ECS - The Electrochemical Society</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.1149/1.3697457/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27922,27923,53844,53891</link.rule.ids></links><search><creatorcontrib>Koffel, Stephane</creatorcontrib><creatorcontrib>Pichler, Peter</creatorcontrib><creatorcontrib>Reading, Michael A.</creatorcontrib><creatorcontrib>Van den Berg, Jakob</creatorcontrib><creatorcontrib>Kheyrandish, Hamid</creatorcontrib><creatorcontrib>Hamm, Silke</creatorcontrib><creatorcontrib>Lerch, Wilfried</creatorcontrib><creatorcontrib>Pakfar, Ardechir</creatorcontrib><creatorcontrib>Tavernier, Clement</creatorcontrib><title>Precipitation of Antimony Implanted into Silicon</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>Antimony was implanted into silicon, followed by a rapid thermal annealing step to recrystallize the substrate. 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| ispartof | ECS transactions, 2012-05, Vol.41 (34), p.9-17 |
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| title | Precipitation of Antimony Implanted into Silicon |
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